IRLR6225PBF International Rectifier, IRLR6225PBF Datasheet - Page 4

• Manufacturer Part Number: IRLR6225PBF
• Description: MOSFET N-CH 20V 100A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR6225PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 mOhm @ 21A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 1.1V @ 50µA
• Gate Charge (qg) @ Vgs: 72nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3770pF @ 10V
• Power - Max: 63W
• Mounting Type: Surface Mount
• Package / Case: *
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 3200µohm
• Rds(on) Test Voltage Vgs: 4.5V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: D-PAK
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 4 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 100 A
• Power Dissipation: 63 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 48 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRLR6225PbF
Fig 7. Typical Source-Drain Diode Forward Voltage
4
1000
100
100
80
60
40
20
0.1
10
0.001
0
1
0.01
Fig 9. Maximum Drain Current vs.
0.1
25
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
10
1
1E-006
Case (Bottom) Temperature
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
T J = 150°C
V SD , Source-to-Drain Voltage (V)
D = 0.50
50
T C , Case Temperature (°C)
0.01
0.02
0.20
0.10
0.05
T J = 25°C
SINGLE PULSE
( THERMAL RESPONSE )
75
1E-005
Limited By Package
100
V GS = 0V
125
t 1 , Rectangular Pulse Duration (sec)
150
0.0001
Fig 10. Threshold Voltage vs. Temperature
1000
100
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
10
Fig 8. Maximum Safe Operating Area
0.001
1
-75 -50 -25
0
Tc = 25°C
Tj = 150°C
Single Pulse
Limited by
Package
V DS , Drain-to-Source Voltage (V)
I D = 50µA
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
T J , Temperature ( °C )
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1
0
10msec
0.01
DC
25
50
10
75 100 125 150
www.irf.com
100µsec
1msec
0.1
100