STB5N62K3 STMicroelectronics, STB5N62K3 Datasheet - Page 5

• Manufacturer Part Number: STB5N62K3
• Description: MOSFET N-CH 620V 4.2A D2PAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH3™r

Specifications of STB5N62K3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.6 Ohm @ 2.1A, 10V
• Drain To Source Voltage (vdss): 620V
• Current - Continuous Drain (id) @ 25° C: 4.2A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 680pF @ 50V
• Power - Max: 70W
• Mounting Type: Surface Mount
• Package / Case: *
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 4.2A
• Drain Source Voltage Vds: 620V
• On Resistance Rds(on): 1.28ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Power: RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10953-2

STB/D/F/P/U5N62K3
Table 6.
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Table 8.
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Symbol
Symbol
Symbol
I
BV
V
SDM
t
t
I
I
d(on)
d(off)
SD
RRM
RRM
I
Q
Q
SD
t
t
t
t
GSO
rr
rr
r
f
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Gate-source breakdown
voltage
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Gate-source Zener diode
Parameter
Parameter
Parameter
Doc ID 17361 Rev 2
Igs=± 1 mA (open drain)
V
R
(see Figure 19)
I
I
V
(see Figure 21)
I
V
(see Figure 21)
SD
SD
SD
DD
G
DD
DD
= 4.7 Ω, V
= 4.2 A, V
= 4.2 A, di/dt = 100 A/µs
= 4.2 A, di/dt = 100 A/µs
= 310 V, I
= 60 V
= 60 V T
Test conditions
Test conditions
Test conditions
J
GS
D
GS
= 150 °C
= 4.2 A,
= 10 V
= 0
Electrical characteristics
Min.
Min.
Min. Typ. Max Unit
30
-
-
-
-
-
Typ.
1900
2200
Typ.
12
40
21
290
320
8
13
14
-
16.8
Max. Unit
Max Unit
4.2
1.5
-
-
nC
nC
ns
ns
ns
ns
ns
ns
5/19
A
A
V
A
A
V