STB5N62K3 STMicroelectronics, STB5N62K3 Datasheet - Page 9
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STB5N62K3
Manufacturer Part Number
STB5N62K3
Description
MOSFET N-CH 620V 4.2A D2PAK
Manufacturer
STMicroelectronics
Series
SuperMESH3™r
Datasheet
1.STP5N62K3.pdf
(19 pages)
Specifications of STB5N62K3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.6 Ohm @ 2.1A, 10V
Drain To Source Voltage (vdss)
620V
Current - Continuous Drain (id) @ 25° C
4.2A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
26nC @ 10V
Input Capacitance (ciss) @ Vds
680pF @ 50V
Power - Max
70W
Mounting Type
Surface Mount
Package / Case
*
Transistor Polarity
N Channel
Continuous Drain Current Id
4.2A
Drain Source Voltage Vds
620V
On Resistance Rds(on)
1.28ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3.75V
Power
RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10953-2
STB/D/F/P/U5N62K3
3
Figure 19. Switching times test circuit for
Figure 21. Test circuit for inductive load
Figure 23. Unclamped inductive waveform
25 Ω
P
V
W
DD
G
V
D
S
GS
D.U.T.
A
B
resistive load
switching and diode recovery times
Test circuits
I
D
V
R
D
G
R
G
FAST
DIODE
B
A
I
DM
V
G
A
B
D
R
D.U.T.
L
S
D
L=100μH
V
2200
μF
(BR)DSS
3.3
μF
3.3
μF
Doc ID 17361 Rev 2
1000
μF
AM01472v1
AM01468v1
AM01470v1
V
DD
V
DD
V
DD
Figure 20. Gate charge test circuit
Figure 22. Unclamped inductive load test
Figure 24. Switching time waveform
V
P
i
V
W
0
0
i
=20V=V
P
w
10%
2200
μF
1kΩ
GMAX
td
circuit
on
I
90%
V
t
D
on
D
I
G
2.7kΩ
12V
t
=CONST
r
47kΩ
10%
V
GS
L
D.U.T.
V
47kΩ
100Ω
DS
2200
μF
100nF
90%
td
off
t
off
Test circuits
3.3
μF
D.U.T.
t
f
10%
AM01469v1
AM01471v1
AM01473v1
1kΩ
90%
V
V
V
9/19
G
DD
DD