STB5N62K3 STMicroelectronics, STB5N62K3 Datasheet - Page 7
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STB5N62K3
Manufacturer Part Number
STB5N62K3
Description
MOSFET N-CH 620V 4.2A D2PAK
Manufacturer
STMicroelectronics
Series
SuperMESH3™r
Datasheet
1.STP5N62K3.pdf
(19 pages)
Specifications of STB5N62K3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.6 Ohm @ 2.1A, 10V
Drain To Source Voltage (vdss)
620V
Current - Continuous Drain (id) @ 25° C
4.2A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
26nC @ 10V
Input Capacitance (ciss) @ Vds
680pF @ 50V
Power - Max
70W
Mounting Type
Surface Mount
Package / Case
*
Transistor Polarity
N Channel
Continuous Drain Current Id
4.2A
Drain Source Voltage Vds
620V
On Resistance Rds(on)
1.28ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3.75V
Power
RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10953-2
STB/D/F/P/U5N62K3
Figure 8.
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance
Figure 12. Capacitance variations
1000
V
100
(V)
(pF)
(A)
10
12
10
10
GS
I
C
D
6
0
6
2
8
4
2
8
4
0
1
0
0
0.1
V
DS
Output characteristics
5
5
1
10
10
V
15
DD
I
D
V
=4.2A
=496V
15
10
GS
20
=10V
20
25
100
25
30
V
GS
Q
V
DS
Doc ID 17361 Rev 2
g
V
(nC)
AM08247v1
AM08243v1
AM08245v1
DS
(V)
7V
6V
5V
500
400
100
0
300
200
Ciss
Crss
(V)
Coss
Figure 9.
Figure 13. Output capacitance stored energy
R
DS(on)
1.32
1.22
1.36
1.34
1.30
1.26
1.24
E
1.38
1.28
(µJ)
(A)
(Ω)
I
oss
D
7
6
5
4
3
2
0
1
2
1
4
3
0
0
0
Transfer characteristics
1.0
100
2
200
V
V
2.0
GS
DS
4
Electrical characteristics
=10V
=15V
300
6
3.0
400
500
8
4.0
AM08244v1
AM08246v1
AM08248v1
V
V
DS
GS
I
D
(A)
(V)
(V)
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