STD8N65M5 STMicroelectronics, STD8N65M5 Datasheet - Page 16
![MOSFET N-CH 650V 7A DPAK](/photos/29/5/290509/dpak_sml.jpg)
STD8N65M5
Manufacturer Part Number
STD8N65M5
Description
MOSFET N-CH 650V 7A DPAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STP8N65M5.pdf
(20 pages)
Specifications of STD8N65M5
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
600 mOhm @ 3.5A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
690pF @ 100V
Power - Max
70W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.56 Ohms
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
25 V
Continuous Drain Current
7 A
Power Dissipation
70 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10878-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STD8N65M5
Manufacturer:
STMicroelectronics
Quantity:
2 000
Package mechanical data
16/20
Dim.
D1
A1
b2
E1
e1
L1
L2
V2
c2
J1
D
H
R
A
b
E
e
L
c
D²PAK (TO-263) mechanical data
Doc ID 16531 Rev 2
Min.
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
8.50
4.88
2.49
2.29
1.27
1.30
10
15
0°
mm.
Typ.
2.54
0.4
STD/F/I/P/U8N65M5
0079457_P
10.40
15.85
Max.
4.60
0.23
0.93
1.70
0.60
1.36
9.35
5.28
2.69
2.79
1.40
1.75
8°