STD8N65M5 STMicroelectronics, STD8N65M5 Datasheet - Page 6
![MOSFET N-CH 650V 7A DPAK](/photos/29/5/290509/dpak_sml.jpg)
STD8N65M5
Manufacturer Part Number
STD8N65M5
Description
MOSFET N-CH 650V 7A DPAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STP8N65M5.pdf
(20 pages)
Specifications of STD8N65M5
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
600 mOhm @ 3.5A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
690pF @ 100V
Power - Max
70W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.56 Ohms
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
25 V
Continuous Drain Current
7 A
Power Dissipation
70 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10878-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STD8N65M5
Manufacturer:
STMicroelectronics
Quantity:
2 000
Electrical characteristics
2.1
6/20
Figure 2.
Figure 4.
Figure 6.
0.01
0.01
0.01
0.1
0.1
0.1
(A)
(A)
(A)
10
10
10
I
I
I
D
D
D
1
1
1
0.1
0.1
0.1
Electrical characteristics (curves)
Safe operating area for TO-220,
I²PAK, D²PAK
Safe operating area for DPAK, IPAK Figure 5.
Safe operating area for TO-220FP
1
1
1
10
10
10
Tj=150°C
Tc=25°C
Single pulse
Tj=150°C
Tc=25°C
Single pulse
Tj=150°C
Tc=25°C
Single pulse
100
100
100
V
V
V
DS
DS
DS
(V)
(V)
(V)
Doc ID 16531 Rev 2
100µs
100µs
100µs
1ms
1ms
1ms
10µs
10ms
10µs
10ms
10µs
10ms
AM08194v1
AM08195v1
AM08196v1
Figure 3.
Figure 7.
Thermal impedance for TO-220,
I²PAK, D²PAK
Thermal impedance for DPAK, IPAK
Thermal impedance for TO-220FP
STD/F/I/P/U8N65M5