STD8N65M5 STMicroelectronics, STD8N65M5 Datasheet - Page 8
![MOSFET N-CH 650V 7A DPAK](/photos/29/5/290509/dpak_sml.jpg)
STD8N65M5
Manufacturer Part Number
STD8N65M5
Description
MOSFET N-CH 650V 7A DPAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STP8N65M5.pdf
(20 pages)
Specifications of STD8N65M5
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
600 mOhm @ 3.5A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
690pF @ 100V
Power - Max
70W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.56 Ohms
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
25 V
Continuous Drain Current
7 A
Power Dissipation
70 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10878-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STD8N65M5
Manufacturer:
STMicroelectronics
Quantity:
2 000
Electrical characteristics
1. Eon including reverse recovery of a SiC diode
8/20
Figure 14. Normalized gate threshold voltage
Figure 16. Switching losses vs gate resistance
V
GS(th)
1.00
0.80
(norm)
1.10
0.70
0.90
(μJ)
100
-50
10
E
1
0
vs temperature
(1)
-25
V
V
I
D
CL
GS
=4A
=400V
=10V
10
0
25
20
50
75
30
100
Eoff
40
T
J
Eon
(°C)
Doc ID 16531 Rev 2
AM08204v1
AM08206v1
R
G
(Ω)
Figure 15. Normalized on resistance vs
Figure 17. Normalized B
R
BV
DS(on)
(norm)
1.07
1.03
0.99
0.97
0.95
1.05
1.01
0.93
(norm)
1.0
DSS
0.5
1.5
2.0
-50
-50
temperature
-25
-25
0
0
V
I
25
D
GS
25
=3.5A
=10V
I
D
=1mA
50
VDSS
50
STD/F/I/P/U8N65M5
75
75
vs temperature
100
100
T
T
J
J
(°C)
(°C)
AM08205v1
AM08203v1