STP120N4F6 STMicroelectronics, STP120N4F6 Datasheet - Page 4

• Manufacturer Part Number: STP120N4F6
• Description: MOSFET N-CH 40V 80A TO-220AB
• Manufacturer: STMicroelectronics
• Series: STripFET™ DeepGATE™r

Specifications of STP120N4F6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.3 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 65nC @ 10V
• Input Capacitance (ciss) @ Vds: 3850pF @ 25V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10962-5

Electrical characteristics
2
4/17
Electrical characteristics
(T
Table 5.
Table 6.
V
Symbol
Symbol
R
CASE
V
(BR)DSS
I
I
C
DS(on)
GS(th)
C
C
Q
Q
GSS
DSS
R
Q
oss
rss
iss
gs
gd
G
g
= 25 °C unless otherwise specified)
Drain-source breakdown
Voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Intrinsic gate resistance
Static
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
Doc ID 17042 Rev 3
V
V
V
V
(see Figure 14)
f = 1 MHz open drain
I
V
V
V
V
V
For TO-220
V
For DPAK/D²PAK
D
GS
GS
DS
DD
DS
DS
GS
DS
GS
GS
= 250 µA, V
= 25 V, f=1 MHz,
= 0 V
= 20 V, I
= 10 V
Test conditions
Test conditions
= 20 V
= 20 V,Tc = 125 °C
= ± 20 V
= V
= 10 V, I
= 10 V, I
GS
, I
D
D
D
D
= 250 µA
GS
= 80 A
= 40 A
= 40 A
= 0
Min.
Min
40
2
-
-
-
Typ.
3850
Typ.
650
350
3.8
3.5
1.5
65
20
16
STD/B/P120N4F6
Max.
Max.
±
4.3
4.0
100
10
1
4
-
-
-
Unit
Unit
mΩ
mΩ
nC
nC
nC
pF
pF
pF
µA
µA
nA
Ω
V
V