STP120N4F6 STMicroelectronics, STP120N4F6 Datasheet - Page 5

• Manufacturer Part Number: STP120N4F6
• Description: MOSFET N-CH 40V 80A TO-220AB
• Manufacturer: STMicroelectronics
• Series: STripFET™ DeepGATE™r

Specifications of STP120N4F6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.3 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 65nC @ 10V
• Input Capacitance (ciss) @ Vds: 3850pF @ 25V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10962-5

STD/B/P120N4F6
Table 7.
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
d(on)
d(off)
RRM
I
SD
Q
t
SD
t
t
r
rr
f
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching on/off (inductive load)
Source drain diode
Parameter
Parameter
Doc ID 17042 Rev 3
V
R
(see Figure 15)
I
I
di/dt = 100 A/µs,
V
(see Figure 17)
SD
SD
DD
G
DD
= 4.7 Ω, V
= 40 A, V
= 80 A,
Test conditions
Test conditions
= 20 V, I
= 30 V
D
GS
GS
= 40 A,
= 0
= 10 V
Electrical characteristics
Min.
Min.
-
-
-
-
-
Typ.
Typ.
20
70
40
20
2.8
40
56
Max.
Max.
320
1.1
80
-
-
Unit
Unit
nC
ns
ns
ns
ns
ns
5/17
A
A
V
A