STP120N4F6 STMicroelectronics, STP120N4F6 Datasheet - Page 6

• Manufacturer Part Number: STP120N4F6
• Description: MOSFET N-CH 40V 80A TO-220AB
• Manufacturer: STMicroelectronics
• Series: STripFET™ DeepGATE™r

Specifications of STP120N4F6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.3 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 65nC @ 10V
• Input Capacitance (ciss) @ Vds: 3850pF @ 25V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10962-5

Electrical characteristics
2.1
6/17
Figure 2.
Figure 4.
Figure 6.
100
0.1
BV
(A)
10
I
I
D
D
1
0.95
0.90
350
150
1.00
0.85
0.80
300
250
200
100
(norm)
1.10
1.05
1.15
0.1
(A)
DSS
50
0
0
-75
Electrical characteristics (curves)
Safe operating area
Output characteristics
Normalized B
1
V
GS
-25
=10V
2
1
3
25
4
VDSS
5
75
10
vs temperature
6
Tj=175°C
Tc=25°C
Single pulse
125
7
5V
V
DS
8
175
(V)
6V
4V
Doc ID 17042 Rev 3
100µs
AM08627v1
1ms
10ms
V
AM08630v1
AM08628v1
DS
T
J
(V)
(°C)
Figure 3.
Figure 5.
Figure 7.
R
200
100
DS(on)
300
150
(mΩ)
(A)
50
I
4.0
3.5
3.0
2.5
4.5
2.0
D
0
0
Thermal impedance
Transfer characteristics
Static drain-source on resistance
1
20
V
GS
=10V
2
40
3
V
60
DS=
4
STD/B/P120N4F6
2V
80
5
V
AM08631v1
AM08629v1
GS
I
(V)
D
(A)