IPP60R520E6 Infineon Technologies, IPP60R520E6 Datasheet - Page 13

• Manufacturer Part Number: IPP60R520E6
• Description: MOSFET N-CH 600V 8.1A TO220
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of IPP60R520E6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 520 mOhm @ 2.8A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 8.1A
• Vgs(th) (max) @ Id: 3.5V @ 230µA
• Gate Charge (qg) @ Vgs: 23.4nC @ 10V
• Input Capacitance (ciss) @ Vds: 512pF @ 100V
• Power - Max: 66W
• Mounting Type: *
• Package / Case: *
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.47 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 8.1 A
• Power Dissipation: 66 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Table 19
Table 20
Table 21
Final Data Sheet
Switching times test circuit for inductive load
Unclamped inductive load test circuit
Test circuit for diode characteristics
R
G1
R
R
G2
G1
V
Test circuits
Switching times test circuit and waveform for inductive load
Unclamped inductive load test circuit and waveform
Test circuit and waveform for diode characteristics
= R
GS
I
D
I
G2
D
V
V
V
DS
DS
DS
Switching time waveform
Unclamped inductive waveform
Diode recovery waveform
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V
V
GS
DS
V
DS
600V CoolMOS™ E6 Power Transistor
10%
90%
I
D
t
d(on)
t
on
t
r
V
t
D
d(off)
t
off
Rev. 2.0, 2010-04-09
t
f
V
(BR)DS
IPx60R520E6
Test circuits
V
DS