IPP60R520E6 Infineon Technologies, IPP60R520E6 Datasheet - Page 7
![MOSFET N-CH 600V 8.1A TO220](/photos/16/8/160866/to220_sml.jpg)
IPP60R520E6
Manufacturer Part Number
IPP60R520E6
Description
MOSFET N-CH 600V 8.1A TO220
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet
1.IPP60R520E6.pdf
(16 pages)
Specifications of IPP60R520E6
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
520 mOhm @ 2.8A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
8.1A
Vgs(th) (max) @ Id
3.5V @ 230µA
Gate Charge (qg) @ Vgs
23.4nC @ 10V
Input Capacitance (ciss) @ Vds
512pF @ 100V
Power - Max
66W
Mounting Type
*
Package / Case
*
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.47 Ohms
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
8.1 A
Power Dissipation
66 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPP60R520E6
Manufacturer:
INFINEON
Quantity:
12 500
Table 7
Parameter
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Table 8
Parameter
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Final Data Sheet
Gate charge characteristics
Reverse diode characteristics
Symbol
Q
Q
Q
V
Symbol
V
t
Q
I
rr
rrm
plateau
SD
gs
gd
g
rr
Min.
-
-
-
-
Min.
-
-
-
-
7
Typ.
2.8
12
23.4
5.4
Typ.
0.9
260
2.5
18
Values
Values
600V CoolMOS™ E6 Power Transistor
Max.
-
-
-
-
Max.
-
-
-
-
Unit
nC
V
Unit
V
ns
µC
A
Electrical characteristics
Note /
Test Condition
V
V
Note /
Test Condition
V
T
V
d
(see table 22)
Rev. 2.0, 2010-04-09
i
j
DD
GS
GS
R
=25 °C
F
=400 V,
/d
=480 V,
=0 to 10 V
=0 V,
t
IPx60R520E6
=100 A/µs
I
F
I
=3.5A,
F
I
=3.5A,
D
=3.5A,