IPA60R190E6 Infineon Technologies, IPA60R190E6 Datasheet - Page 4

• Manufacturer Part Number: IPA60R190E6
• Description: MOSFET N-CH 600V 20.2A TO220
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of IPA60R190E6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 9.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 20.2A
• Vgs(th) (max) @ Id: 3.5V @ 630µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 100V
• Power - Max: 34W
• Mounting Type: *
• Package / Case: *
• Packages: PG-TO220-3
• Vds (max): 600.0 V
• Package: TO-220 FullPAK
• Rds(on) @ Tj=25°c Vgs=10: 190.0 mOhm
• Id(max) @ Tc=25°c: 20.2 A
• Idpuls (max): 59.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2
at
Table 2
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage
Power dissipation for
TO-220, TO-247
Power dissipation for
TO-220 FullPAK
Operating and storage temperature
Mounting torque
TO-220, TO-247
Mounting torque
TO-220 FullPAK
Continuous diode forward current
Diode pulse current
Reverse diode dv/dt
Maximum diode commutation
speed
1) Limited by
2) Pulse width
3) Identical low side and high side switch with identical
Final Data Sheet
T
j
= 25 °C, unless otherwise specified.
3)
Maximum ratings
Maximum ratings
T
t
j,max.
p
limited by
Maximum duty cycle D=0.75
2)
3)
2)
1)
T
j,max
Symbol
dv/dt
I
I
E
E
I
V
P
P
T
I
I
dv/dt
di
D
D,pulse
AR
S
S,pulse
j
AS
AR
GS
tot
tot
,T
f
/dt
stg
R
Min.
-
-
-
-
-
-
-20
-30
-
-
-55
-
-
-
-
G
4
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Values
600V CoolMOS™ E6 Power Transistor
Max.
20.2
59
418
0.63
3.4
50
20
30
151
34
150
60
17.5
59
15
500
12.8
50
Unit
V/ns
A
A
mJ
A
V
W
°C
Ncm
A
A
V/ns
A/µs
Note / Test Condition
T
T
T
I
(see table 20)
I
V
static
AC (f>1 Hz)
T
M3 and M3.5 screws
M2.5 screws
T
T
V
T
(see table 21)
D
D
C
C
C
DS
C
C
C
DS
j
=25 °C
=3.4 A,V
=3.4 A,V
= 25 °C
= 100°C
=25 °C
=25 °C
=25 °C
=25 °C
=0...480 V
=0...400 V,I
Rev. 2.0, 2010-05-03
Maximum ratings
IPx60R190E6
DD
DD
=50 V
=50 V
SD
I
D
,