IPA60R190E6 Infineon Technologies, IPA60R190E6 Datasheet - Page 9

• Manufacturer Part Number: IPA60R190E6
• Description: MOSFET N-CH 600V 20.2A TO220
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of IPA60R190E6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 9.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 20.2A
• Vgs(th) (max) @ Id: 3.5V @ 630µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 100V
• Power - Max: 34W
• Mounting Type: *
• Package / Case: *
• Packages: PG-TO220-3
• Vds (max): 600.0 V
• Package: TO-220 FullPAK
• Rds(on) @ Tj=25°c Vgs=10: 190.0 mOhm
• Id(max) @ Tc=25°c: 20.2 A
• Idpuls (max): 59.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Final Data Sheet
Table 11
Table 12
I
I
Safe operating area
TO-220, TO-247
Safe operating area
TO-220, TO-247
D
D
=f(V
=f(V
DS
DS
);
); T
T
C
C
=80 °C; D=0; parameter t
=25 °C; D=0; parameter t
T
T
C
C
=25 °C
=80 °C
p
p
9
Safe operating area
TO-220 FullPAK
I
Safe operating area
TO-220 FullPAK
I
D
D
=f(V
=f(V
DS
DS
600V CoolMOS™ E6 Power Transistor
);
); T
T
C
C
=25 °C; D=0; parameter t
=80 °C; D=0; parameter t
Electrical characteristics diagrams
T
T
C
C
=25 °C
=80 °C
Rev. 2.0, 2010-05-03
p
p
IPx60R190E6