BF1107,235 NXP Semiconductors, BF1107,235 Datasheet - Page 4

• Manufacturer Part Number: BF1107,235
• Description: MOSFET N-CH 3V 10MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BF1107,235

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: N-Channel
• Voltage - Rated: 2V
• Current Rating: 10mA
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 12 Ohms
• Drain-source Breakdown Voltage: 7 V
• Gate-source Breakdown Voltage: 7 V
• Continuous Drain Current: 10 mA
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Frequency: -
• Gain: -
• Noise Figure: -
• Current - Test: -
• Voltage - Test: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
BF1107_4
Product data sheet
Fig 1. On-state insertion loss as a function of
Fig 3. Input and output return loss (on-state) as a function of frequency; typical values
L
ins(on)
(dB)
(1) R
(2) R
(1) R
(2) R
0
1
2
3
4
5
V
frequency; typical values
V
10
SG
SG
S
S
S
S
= R
= R
= R
= R
= V
= V
L
L
L
L
DG
DG
= 50
= 75
= 50
= 75
= 0 V
= 0 V
10
2
(2)
(1)
RL
in
(dB)
; RL
f (MHz)
10
15
20
25
0
5
out
10
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10
Rev. 04 — 9 January 2007
3
10
2
(1)
(2)
Fig 2. Off-state isolation as a function of frequency;
ISL
(dB)
(1) R
(2) R
f (MHz)
off
20
40
60
0
V
typical values
10
S
S
SG
= R
= R
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= V
L
L
DG
= 50
= 75
10
= 5 V
3
N-channel single gate MOSFET
10
2
(2)
(1)
f (MHz)
© NXP B.V. 2007. All rights reserved.
001aaf780
BF1107
10
3
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