BF1107,235 NXP Semiconductors, BF1107,235 Datasheet - Page 6

• Manufacturer Part Number: BF1107,235
• Description: MOSFET N-CH 3V 10MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BF1107,235

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: N-Channel
• Voltage - Rated: 2V
• Current Rating: 10mA
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 12 Ohms
• Drain-source Breakdown Voltage: 7 V
• Gate-source Breakdown Voltage: 7 V
• Continuous Drain Current: 10 mA
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Frequency: -
• Gain: -
• Noise Figure: -
• Current - Test: -
• Voltage - Test: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
10. Abbreviations
11. Revision history
Table 10.
BF1107_4
Product data sheet
Document ID
BF1107_4
Modifications:
BF1107_1107W_3
(9397 750 05776)
BF1107_2
(9397 750 03969)
BF1107_N_1
(9397 750 03695)
Revision history
Table 9.
Acronym
MOSFET
RF
VCR
Release date
20070109
19990514
19980622
19980407
•
•
•
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Symbol notation has been adapted to comply with the current guidelines of NXP
Semiconductors.
Product type BF1107W has been removed from this data sheet.
Abbreviations
Description
Metal-Oxide Semiconductor Field-Effect Transistor
Radio Frequency
Videocassette Recorder
Data sheet status
Product data sheet
Product data sheet
Product data sheet
Preliminary data sheet
Rev. 04 — 9 January 2007
Change notice
-
-
-
-
N-channel single gate MOSFET
Supersedes
BF1107_1107W_3
BF1107_2
BF1107_N_1
-
© NXP B.V. 2007. All rights reserved.
BF1107
6 of 8