PBSS4041NZ,115 NXP Semiconductors, PBSS4041NZ,115 Datasheet - Page 7

• Manufacturer Part Number: PBSS4041NZ,115
• Description: TRANS NPN 60V 7A SOT223
• Manufacturer: NXP Semiconductors

Specifications of PBSS4041NZ,115

• Package / Case: TO-261-4, TO-261AA
• Mounting Type: Surface Mount
• Power - Max: 2.6W
• Current - Collector (ic) (max): 7A
• Voltage - Collector Emitter Breakdown (max): 60V
• Transistor Type: NPN
• Current - Collector Cutoff (max): 100nA
• Frequency - Transition: 105MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 250 @ 4A, 2V
• Vce Saturation (max) @ Ib, Ic: 195mV @ 350mA, 7A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
PBSS4041NZ_1
Product data sheet
Fig 5.
Fig 7.
V
h
(V)
1500
1000
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
FE
BE
500
1.2
0.8
0.4
0.0
0
10
10
V
DC current gain as a function of collector
current; typical values
V
current; typical values
Base-emitter voltage as a function of collector
−1
−1
amb
amb
amb
amb
amb
amb
CE
CE
= 2 V
= 2 V
= 100 °C
= 25 °C
= −55 °C
= −55 °C
= 25 °C
= 100 °C
1
1
(1)
(2)
(3)
10
10
(1)
(2)
(3)
10
10
2
2
10
10
3
3
All information provided in this document is subject to legal disclaimers.
10
10
006aac156
006aac158
I
I
4
4
C
C
(mA)
(mA)
10
10
Rev. 01 — 31 March 2010
5
5
Fig 6.
Fig 8.
V
BEsat
(A)
(V)
I
(1) T
(2) T
(3) T
16.0
C
12.0
8.0
4.0
0.0
1.3
0.9
0.5
0.1
10
0.0
T
Collector current as a function of
collector-emitter voltage; typical values
I
Base-emitter saturation voltage as a function
of collector current; typical values
−1
C
amb
amb
amb
amb
/I
60 V, 7 A NPN low V
B
= 20
= 25 °C
= −55 °C
= 25 °C
= 100 °C
1
1.0
(1)
(2)
(3)
10
2.0
10
PBSS4041NZ
2
I
B
3.0
(mA) = 120
CEsat
10
3
© NXP B.V. 2010. All rights reserved.
96
72
48
24
4.0
(BISS) transistor
10
006aac157
006aac159
12
V
I
4
CE
C
108
84
60
36
(mA)
(V)
10
5.0
5
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