PBSS4041NZ,115 NXP Semiconductors, PBSS4041NZ,115 Datasheet - Page 8

• Manufacturer Part Number: PBSS4041NZ,115
• Description: TRANS NPN 60V 7A SOT223
• Manufacturer: NXP Semiconductors

Specifications of PBSS4041NZ,115

• Package / Case: TO-261-4, TO-261AA
• Mounting Type: Surface Mount
• Power - Max: 2.6W
• Current - Collector (ic) (max): 7A
• Voltage - Collector Emitter Breakdown (max): 60V
• Transistor Type: NPN
• Current - Collector Cutoff (max): 100nA
• Frequency - Transition: 105MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 250 @ 4A, 2V
• Vce Saturation (max) @ Ib, Ic: 195mV @ 350mA, 7A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
PBSS4041NZ_1
Product data sheet
Fig 9.
Fig 11. Collector-emitter saturation resistance as a
V
R
CEsat
CEsat
(Ω)
(V)
10
10
10
(1) T
(2) T
(3) T
10
10
(1) T
(2) T
(3) T
10
10
−1
−2
−3
−1
−2
1
1
10
2
10
I
function of collector current; typical values
I
function of collector current; typical values
Collector-emitter saturation voltage as a
−1
C
−1
C
amb
amb
amb
amb
amb
amb
/I
/I
B
B
= 20
= 20
= 100 °C
= 25 °C
= −55 °C
= 100 °C
= 25 °C
= −55 °C
1
1
(2)
(3)
10
10
(1)
10
10
2
2
(1)
10
10
3
3
(2)
(3)
All information provided in this document is subject to legal disclaimers.
10
10
006aac160
006aac162
I
I
4
4
C
C
(mA)
(mA)
10
10
Rev. 01 — 31 March 2010
5
5
Fig 10. Collector-emitter saturation voltage as a
Fig 12. Collector-emitter saturation resistance as a
R
V
CEsat
CEsat
(Ω)
(V)
10
10
10
(1) I
(2) I
(3) I
10
10
(1) I
(2) I
(3) I
10
10
10
−1
−2
−3
−1
−2
1
1
10
3
2
10
T
function of collector current; typical values
T
function of collector current; typical values
−1
C
C
C
−1
C
C
C
amb
amb
/I
/I
/I
/I
/I
/I
60 V, 7 A NPN low V
B
B
B
B
B
B
= 100
= 50
= 10
= 100
= 50
= 10
= 25 °C
= 25 °C
1
1
(1)
(2)
(3)
10
10
(1)
(2)
(3)
10
10
PBSS4041NZ
2
2
CEsat
10
10
3
3
© NXP B.V. 2010. All rights reserved.
(BISS) transistor
10
10
006aac161
006aac163
I
I
4
4
C
C
(mA)
(mA)
10
10
5
5
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