MCIMX257CVM4 Freescale Semiconductor, MCIMX257CVM4 Datasheet - Page 31
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MCIMX257CVM4
Manufacturer Part Number
MCIMX257CVM4
Description
IC MPU I.MX25 IND 400MAPBGA
Manufacturer
Freescale Semiconductor
Series
i.MX25r
Datasheet
1.MCIMX257CJM4.pdf
(154 pages)
Specifications of MCIMX257CVM4
Core Processor
ARM9
Core Size
32-Bit
Speed
400MHz
Connectivity
1-Wire, CAN, EBI/EMI, Ethernet, I²C, MMC, SmartCard, SPI, SSI, UART/USART, USB OTG
Peripherals
DMA, I²S, LCD, POR, PWM, WDT
Number Of I /o
128
Program Memory Type
External Program Memory
Ram Size
144K x 8
Voltage - Supply (vcc/vdd)
1.15 V ~ 1.52 V
Data Converters
A/D 3x12b
Oscillator Type
External
Operating Temperature
-40°C ~ 85°C
Package / Case
400-LFBGA
Operating Temperature (min)
-40C
Operating Temperature (max)
85C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Program Memory Size
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MCIMX257CVM4
Manufacturer:
TOTO
Quantity:
83
Company:
Part Number:
MCIMX257CVM4
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
Note:
1. Maximum condition for tpr, tpo, and tpv: wcs model, 1.1 V, I/O 1.65 V, and 105 °C. Minimum condition for tpr, tpo, and tpv: bcs
2. Minimum condition for tps: wcs model, 1.1 V, I/O 1.65 V and 105 °C. tps is measured between VIL to VIH for rising edge and
3. Maximum condition for tdit: bcs model, 1.3 V, I/O 1.95 V and –40 °C.
4. Maximum condition for tpi and trfi: wcs model, 1.1 V, I/O 1.65 V and 105 °C. Minimum condition for tpi and trfi: bcs model, 1.3 V,
5. Hysteresis mode is recommended for input with transition time greater than 25 ns.
Table 23
Freescale Semiconductor
Output pad dI/dt (max. drive)
Output pad dI/dt (high drive)
Output pad dI/dt (standard
drive)
Input pad propagation delay without
hysteresis, 50%–50%
Input pad propagation delay with
hysteresis, 50%–50%
Input pad propagation delay without
hysteresis, 40%–60%
Input pad propagation delay with
hysteresis, 40%–60%
Input pad transition times without
hysteresis
Input pad transition times with hysteresis
Maximum input transition times
Duty Cycle
Output Pad Transition Times (Max Drive)
Output Pad Transition Times (High Drive)
Output Pad Transition Times (Standard Drive)
model, 1.3 V, I/O 1.95 V, and –40 °C. Input transition time from core is 1 ns (20%–80%).
between VIH to VIL for falling edge.
I/O 1.95 V and –40 °C. Input transition time from pad is 5 ns (20%–80%).
shows the fast I/O AC parameters for OVDD = 3.0–3.6 V.
Parameter
Parameter
i.MX25 Applications Processor for Consumer and Industrial Products, Rev. 8
Table 22. Fast I/O AC Parameters for OVDD = 1.65
Table 23. Fast I/O AC Parameters for OVDD = 3.0
Symbol
trm
tdit
tdit
tdit
trfi
trfi
tpi
tpi
tpi
tpi
Symbol
Fduty
tpr
tpr
tpr
Condition
Condition
1.6 pF
1.6 pF
1.6 pF
1.6 pF
1.6 pF
1.6 pF
25 pF
50 pF
25 pF
50 pF
25 pF
50 pF
Test
—
25 pF
50 pF
25 pF
50 pF
25 pF
50 pF
Test
1.75/1.63
1.82/1.55
0.16/0.12
0.16/0.13
Rise/Fall
0.80/0.70
1.40/1.60
1.00/0.90
1.95/1.66
1.50/1.30
2.90/2.50
Rise/Fall
2.4/2.6
0.74/1
Min.
Min.
11
12
10
—
40
7
7
9
–
1.95 V (continued)
2.67/2.22
2.28/1.87
0.30/0.18
0.30/0.18
1.12/2.51
1.60/2.39
1.43/1.16
2.66/2.09
2.09/1.67
3.40/3.09
1.1/1.5
3/3.07
Typ.
Typ.
43
46
31
33
27
28
—
–
3.6 V
Rise/Fall
1.64/1.32
2.84/2.10
2.05/1.60
3.70/2.80
3.00/2.30
5.56/4.12
1.75/2.16
2.95/2.54
3.77/3.71
0.33/0.29
0.33/0.29
Rise/Fall
2.92/3
Max.
Max.
112
118
60
81
85
71
74
25
Units
mA/ns
mA/ns
mA/ns
Units
ns
ns
ns
%
ns
ns
ns
ns
ns
ns
ns
Notes
Notes
1
3
4
5
31