BPX 43-4/5 OSRAM Opto Semiconductors Inc, BPX 43-4/5 Datasheet - Page 19

• Manufacturer Part Number: BPX 43-4/5
• Description: Photodetector Transistors PHOTODIODE
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Chipr

Specifications of BPX 43-4/5

• Maximum Power Dissipation: 220 mW
• Maximum Dark Current: 20 nA
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Package / Case: TO-18
• Phototransistor Type: Phototransistor
• Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 50V
• Collector Current (dc) (max): 50mA
• Collector-emitter Sat Volt (max): 0.24/0.26V
• Dark Current (max): 100nA
• Light Current: 9500/15000uA
• Rise Time: 15000/18000ns
• Fall Time: 15000/18000ns
• Power Dissipation: 220mW
• Peak Wavelength: 880nm
• Half-intensity Angle: 30deg
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-18
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q62702P3582

For more detailed product information and technical datasheets, please visit
Infrared Components Technical Data Silicon Photodetectors
For more detailed product information and technical datasheets, please visit http://catalog.osram-os.com
DIL
TO92
T 1
T 1 3/4
T 1 3/4
Sidelooker
Photodiodes
PIN Photodiodes with daylight blocking filter matched for 880 nm IRED
Package
Infrared Components
Silicon Photodetectors
Type
BPW 34 FA
SFH 225 FA
SFH 235 FA
SFH 229 FA
SFH 203 FA
SFH 213 FA
SFH 203 PFA
SFH 205 FA
http://catalog.osram-os.com
Half
angle
φ
±
[°]
± 60
± 60
± 65
± 17
± 20
± 10
± 75
± 60
Radiant
sensitive
area typ.
[mm
7.02
4.84
7.02
0.31
1.00
1.00
1.00
7.02
2
]
I
[μA]
50 (≥
40)
34 (≥
25)
50 (≥
40)
20 (≥
10.8)
50 (≥
30)
90 (≥
65)
6.2 (≥
3.6)
60 (≥
45)
P
Measurement
cond.
λ = 870 nm,
E
cm
λ = 870 nm,
E
cm
λ = 870 nm,
E
cm
λ = 870 nm,
E
cm
λ = 870 nm,
E
cm
λ = 870 nm,
E
cm
λ = 870 nm,
E
cm
λ = 870 nm,
E
cm
e
e
e
e
e
e
e
e
= 1 mW/
= 1 mW/
= 1 mW/
= 1 mW/
= 1 mW/
= 1 mW/
= 1 mW/
= 1 mW/
2
2
2
2
2
2
2
2
, V
, V
, V
, V
, V
, V
, V
, V
R
R
R
R
R
R
R
R
= 5 V
= 5 V
= 5 V
= 5 V
= 5 V
= 5 V
= 5 V
= 5 V
I
[nA]
2 (≤ 30) V
2 (≤ 30) V
2 (≤ 30) V
0.05 (≤
5)
1 (≤ 5)
1 (≤ 5)
1 (≤ 5)
2 (≤ 30) V
R
Measure-
ment cond.
V
V
V
V
R
R
R
R
R
R
R
R
= 10 V
= 10 V
= 10 V
= 10 V
= 20 V
= 20 V
= 20 V
= 10 V
λ
typ.
[nm]
730 ...
1100
740 ...
1120
740 ...
1120
730 ...
1100
800 ...
1100
750 ...
1100
750 ...
1100
740 ...
1100
10%
t
typ
[μs]
0.02
0.02
0.02
0.01
0.005
0.005
0.005
0.02
r
, t
f
Measure-
ment cond.
V
R
λ = 850
nm
V
R
λ = 850
nm
V
R
λ = 850
nm
V
R
λ = 850
nm
V
R
λ = 850
nm
V
R
λ = 850
nm
V
R
λ = 850
nm
V
R
λ = 850
nm
R
R
R
R
R
R
R
R
L
L
L
L
L
L
L
L
= 5 V,
= 50 Ω,
= 5 V,
= 50 Ω,
= 5 V,
= 50 Ω,
= 10 V,
= 50 Ω,
= 20 V,
= 50 Ω,
= 20 V,
= 50 Ω,
= 20 V,
= 50 Ω,
= 5 V,
= 50 Ω,
Ordering Code
Q62702P1129
Q62702P1051
Q62702P0273
Q62702P0216
Q62702P0956
Q62702P1671
Q62702P0947
Q62702P1677
Technical Data
Package
Fig.
41
42
42
13
39
20
40
43
125