BPX 43-4/5 OSRAM Opto Semiconductors Inc, BPX 43-4/5 Datasheet - Page 54

• Manufacturer Part Number: BPX 43-4/5
• Description: Photodetector Transistors PHOTODIODE
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Chipr

Specifications of BPX 43-4/5

• Maximum Power Dissipation: 220 mW
• Maximum Dark Current: 20 nA
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Package / Case: TO-18
• Phototransistor Type: Phototransistor
• Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 50V
• Collector Current (dc) (max): 50mA
• Collector-emitter Sat Volt (max): 0.24/0.26V
• Dark Current (max): 100nA
• Light Current: 9500/15000uA
• Rise Time: 15000/18000ns
• Fall Time: 15000/18000ns
• Power Dissipation: 220mW
• Peak Wavelength: 880nm
• Half-intensity Angle: 30deg
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-18
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q62702P3582

Dimensions in mm (inch)
160
Infrared Components
Figure 43:
Figure 45:
Figure 47:
Approx. weight 2 g
6.9 (0.272)
6.3 (0.248)
4.0 (0.157)
3.4 (0.134)
3.0 (0.118)
0.3 (0.012) max
4.1 (0.161)
3.9 (0.154)
SFH 205 F, SFH 205 FA
BPW 21, BPX 61
SFH 5140 F
Area not flat
Chip position
ø0.45 (0.018)
1.75 (0.069)
1.55 (0.061)
14.5 (0.571)
12.5 (0.492)
34 (1.339)
32 (1.260)
1.6 (0.063)
1.4 (0.055)
2.5 (0.098)
1.3 (0.051)
1.1 (0.043)
GND
17.77 (0.700)
17.27 (0.680)
1.05 (0.041)
0.85 (0.033)
(60˚)
V
OUT
Cathode
V
0.5 (0.020)
CC
1.8 (0.071)
1.2 (0.047)
Radiant sensitive area
4.1 (0.161)
3.7 (0.146)
Radiant
sensitive area
For more detailed product information and technical datasheets, please visit http://catalog.osram-os.com
Cathode
GEOY6651
GEOY6001
GMOY6011
ø0.45 (0.018)
Figure 44:
Figure 46:
Figure 48:
14.5 (0.571)
12.5 (0.492)
(2.7 (0.106))
5.3 (0.209)
5.0 (0.197)
welded
Approx. weight 1.5 g
3.4 (0.134)
3.0 (0.118)
SFH 482, BPX 65
SFH 5440
SFH 221
Radiant sensitive area
0.3 (0.012) max
Diode system
Chip position
Chip position
2.0 (0.079)
5.5 (0.216)
5.0 (0.197)
4.8 (0.189)
4.4 (0.173)
14.5 (0.571)
12.5 (0.492)
glass
lens
ø0.45 (0.018)
GND
2.0 (0.079) x 1.67 (0.066) each
Active area
0.12 (0.005)
0.15 (0.006)
2.7 (0.106)
2.5 (0.098)
Chip position
Radiant sensitive area
V
OUT
CC
Anode B
±0.1 (0.004)
Anode A
GEOY6990
Outline Drawings
Isolated cathode
Anode
Cathode
ø5.6 (0.220)
ø5.3 (0.209)
Metal case
(package)
= SFH 482
= SFH 402, BPX 65
GMOY6639
GETY6013