BPX 43-4/5 OSRAM Opto Semiconductors Inc, BPX 43-4/5 Datasheet - Page 43

• Manufacturer Part Number: BPX 43-4/5
• Description: Photodetector Transistors PHOTODIODE
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Chipr

Specifications of BPX 43-4/5

• Maximum Power Dissipation: 220 mW
• Maximum Dark Current: 20 nA
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Package / Case: TO-18
• Phototransistor Type: Phototransistor
• Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 50V
• Collector Current (dc) (max): 50mA
• Collector-emitter Sat Volt (max): 0.24/0.26V
• Dark Current (max): 100nA
• Light Current: 9500/15000uA
• Rise Time: 15000/18000ns
• Fall Time: 15000/18000ns
• Power Dissipation: 220mW
• Peak Wavelength: 880nm
• Half-intensity Angle: 30deg
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-18
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q62702P3582

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Infrared Components Technical Data Infrared Emitters
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Infrared Components Technical Data Infrared Emitters
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Infrared Components Technical Data Infrared Emitters
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Multi TOPLED
Multi TOPLED
Multi TOPLED
Emitters for special applications
Detector/Emitter in Multi TOPLED package
Package
2 Emitters in Multi TOPLED package
Package
Detector/Emitter in Multi TOPLED package
Package
Infrared Components
Infrared Emitters
Type
SFH 331-JK
Type
SFH 7222
Type
SFH 7221
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http://catalog.osram-os.com
http://catalog.osram-os.com
Emitter
λ
typ
[nm]
635
Detector
Radiant sensi-
tive area typ.
[mm
0.038
λ
typ
[nm]
880
565
Emitter
λ
typ
[nm]
880
Detector
Radiant sensi-
tive area typ.
[mm
0.038
peak
peak
peak
2
2
]
]
Half
angle
ϕ
[°]
± 60
Half angle
ϕ
[°]
± 60
I
[μA]
≥ 16
Half angle
ϕ
[°]
± 60
I
[μA]
≥ 16
PCE
PCE
Φ
typ
[mW]
23
e
I
[mcd]
6 (4 ... 12.5)
Measurement
cond.
λ = 950 nm, E
= 0.1 mW/cm
V
I
[mW/sr]
≥ 4
Measurement
cond.
λ = 880 nm, E
= 0.1 mW/cm
V
V
e
I
[mW/sr]
7 (≥ 4)
CE
CE
e
= 5 V
= 5 V
2
Measure-
ment cond.
I
t
2
F
e
p
e
,
,
= 100 mA,
= 20 ms
Measurement
cond.
I
V
max.
[V]
35
Measurement
cond.
I
= 20 ms
V
max.
[V]
35
F
F
CE
CE
= 10 mA
= 100 mA, t
V
[V]
1.5 (≤ 1.8)
2.0 (≤ 2.6)
F
p
V
[V]
2 (≤ 2.6)
λ
typ.
[nm]
440 ... 1150
V
[V]
1.5 (≤ 1.8)
λ
typ.
[nm]
440 ... 1150
F
F
10%
10%
Measure-
ment cond.
I
t
I
t
F
p
F
p
= 100 mA,
= 10 mA,
= 20 ms
= 20 ms
Measurement
cond.
I
t
typ
[μs]
7
Measurement
cond.
I
= 20 ms
t
typ
[μs]
7
F
F
r
r
, t
, t
= 100 mA, t
= 10 mA
f
f
t
typ
[ns]
500
r
, t
f
p
Ordering Code
Q65110A2821
Ordering Code
Q65110A2742
Ordering Code
Q65110A2741
Technical Data
Package
Fig.
11
Package
Fig.
67
Package
Fig.
12
149