BPV11F Vishay, BPV11F Datasheet - Page 3

• Manufacturer Part Number: BPV11F
• Description: Photodetector Transistors 15 Degree 150mW
• Manufacturer: Vishay
• Type: IR Chipr

Specifications of BPV11F

• Maximum Power Dissipation: 150 mW
• Maximum Dark Current: 50 nA
• Collector- Emitter Voltage Vceo Max: 70 V
• Maximum Operating Temperature: + 100 C
• Package / Case: T-1 3/4
• Transistor Polarity: NPN
• Wavelength Typ: 930nm
• Power Consumption: 150mW
• Viewing Angle: 15°
• No. Of Pins: 2
• Light Current: 9mA
• Dark Current: 50nA
• C-e Breakdown Voltage: 70V
• Current Rating: 50mA
• Voltage - Collector Emitter Breakdown (max): 70V
• Current - Collector (ic) (max): 10mA
• Current - Dark (id) (max): 50nA
• Wavelength: 930nm
• Power - Max: 150mW
• Mounting Type: Through Hole
• Orientation: Top View
• Transistor Case Style: T-1 3/4 (5mm)
• Svhc: No SVHC (20-Jun-2011)
• Current Ic Typ: 9mA
• Rohs Compliant: Yes
• Phototransistor Type: Phototransistor
• Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 70V
• Collector Current (dc) (max): 50mA
• Collector-emitter Sat Volt (max): 0.3V
• Dark Current (max): 50nA
• Power Dissipation: 150mW
• Peak Wavelength: 930nm
• Half-intensity Angle: 30deg
• Mounting: Through Hole
• Pin Count: 2
• Package Type: T-1 3/4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document Number 81505
Rev. 1.4, 08-Mar-05
Figure 3. Relative Collector Current vs. Ambient Temperature
Figure 5. Collector Light Current vs. Collector Emitter Voltage
94 8239
94 8244
94 8245
0.01
100
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.1
0.1
10
10
1
1
0.01
Figure 4. Collector Light Current vs. Irradiance
0
0.1
λ
=950nm
T
E
amb
V
e
20
λ
CE
V
= 1 mW/cm
= 950 nm
CE
- Ambient Temperature ( ° C )
E
– Collector Emitter Voltage ( V )
e
= 5 V
– Irradiance ( mW/ cm
0.1
1
E
0.05 mW/cm
0.02 mW/cm
e
40
0.5 mW/cm
0.2 mW/cm
0.1 mW/cm
=1 mW/cm
2
λ
V
=950nm
CE
60
2
2
=5V
2
2
2
2
10
1
80
2
)
100
100
10
Figure 7. Collector Base Capacitance vs. Collector Base Voltage
94 8250
94 8240
94 8247
Figure 8. Collector Emitter Capacitance vs. Collector Emitter
800
600
400
200
20
16
12
20
16
12
0
8
4
0
8
4
0
0.01
0.1
0.1
Figure 6. Amplification vs. Collector Current
V
V
CE
CE
I
0.1
C
– Collector Emitter Voltage ( V )
– Collector Emitter Voltage ( V )
– Collector Current ( mA )
1
1
V
CE
Vishay Semiconductors
=5V
1
Voltage
f = 1 MHz
f=1MHz
10
10
10
BPV11F
100
100
100
www.vishay.com
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