BPV11F Vishay, BPV11F Datasheet - Page 2

• Manufacturer Part Number: BPV11F
• Description: Photodetector Transistors 15 Degree 150mW
• Manufacturer: Vishay
• Type: IR Chipr

Specifications of BPV11F

• Maximum Power Dissipation: 150 mW
• Maximum Dark Current: 50 nA
• Collector- Emitter Voltage Vceo Max: 70 V
• Maximum Operating Temperature: + 100 C
• Package / Case: T-1 3/4
• Transistor Polarity: NPN
• Wavelength Typ: 930nm
• Power Consumption: 150mW
• Viewing Angle: 15°
• No. Of Pins: 2
• Light Current: 9mA
• Dark Current: 50nA
• C-e Breakdown Voltage: 70V
• Current Rating: 50mA
• Voltage - Collector Emitter Breakdown (max): 70V
• Current - Collector (ic) (max): 10mA
• Current - Dark (id) (max): 50nA
• Wavelength: 930nm
• Power - Max: 150mW
• Mounting Type: Through Hole
• Orientation: Top View
• Transistor Case Style: T-1 3/4 (5mm)
• Svhc: No SVHC (20-Jun-2011)
• Current Ic Typ: 9mA
• Rohs Compliant: Yes
• Phototransistor Type: Phototransistor
• Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 70V
• Collector Current (dc) (max): 50mA
• Collector-emitter Sat Volt (max): 0.3V
• Dark Current (max): 50nA
• Power Dissipation: 150mW
• Peak Wavelength: 930nm
• Half-intensity Angle: 30deg
• Mounting: Through Hole
• Pin Count: 2
• Package Type: T-1 3/4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

BPV11F
Vishay Semiconductors
Electrical Characteristics
T
Optical Characteristics
T
Typical Characteristics
T
www.vishay.com
2
Collector Emitter Breakdown
Voltage
Collector-emitter dark current
DC Current Gain
Collector-emitter capacitance
Collector - base capacitance
Collector Light Current
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Collector Emitter Saturation
Voltage
Turn-On Time
Turn-Off Time
Cut-Off Frequency
amb
amb
amb
Figure 1. Total Power Dissipation vs. Ambient Temperature
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
= 25 °C unless otherwise specified
94 8300
200
160
120
80
40
Parameter
Parameter
0
0
T
amb
20
– Ambient Temperature (°C)
40
I
V
V
V
V
E
V
E
V
V
V
C
I
60
C
CE
CE
CE
CB
e
CE
e
S
S
S
= 1 mA
= 1 mW/cm
= 1 mW/cm
= 1 mA
= 5 V, I
= 5 V, I
= 5 V, I
= 10 V, E = 0
= 5 V, I
= 0 V, f = 1 MHz, E = 0
= 0 V, f = 1 MHz, E = 0
= 5 V
R
thJA
80
Test condition
Test condition
C
C
C
C
= 5 mA, R
= 5 mA, R
= 5 mA, R
= 5 mA, E = 0
2
2
100
, λ = 950 nm,
, λ = 950 nm,
L
L
L
= 100 Ω
= 100 Ω
= 100 Ω
V
Symbol
Symbol
V
(BR)CEO
C
C
I
λ
CEO
h
CEsat
t
t
I
CEO
CBO
λ
ϕ
on
off
f
FE
ca
0.5
Figure 2. Collector Dark Current vs. Ambient Temperature
c
p
94 8249
10
10
10
10
10
4
3
2
1
20
Min
Min
70
3
T
amb
40
- Ambient Temperature (°C)
V
CE
900 to 980
= 10 V
± 15
Typ.
Typ.
450
930
130
110
15
19
1
9
6
5
60
Document Number 81505
80
Max
Max
300
50
Rev. 1.5, 13-Nov-06
100
Unit
Unit
deg
kHz
mA
mV
nm
nm
nA
pF
pF
μs
μs
V