FOD817B Fairchild Semiconductor, FOD817B Datasheet - Page 2

• Manufacturer Part Number: FOD817B
• Description: Transistor Output Optocouplers Phototransistor Output Optocoupler
• Manufacturer: Fairchild Semiconductor

Specifications of FOD817B

• Maximum Fall Time: 18 us
• Maximum Input Diode Current: 50 mA
• Maximum Reverse Diode Voltage: 6 V
• Maximum Rise Time: 18 us
• Output Device: Transistor
• Output Type: DC
• Configuration: 1
• Input Type: DC
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 200 mV
• Isolation Voltage: 5000 Vrms
• Current Transfer Ratio: 260 %
• Maximum Forward Diode Voltage: 1.4 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 200 mW
• Maximum Operating Temperature: + 110 C
• Minimum Operating Temperature: - 55 C
• Package / Case: PDIP Black
• Number Of Elements: 1
• Reverse Breakdown Voltage: 6V
• Forward Voltage: 1.4V
• Forward Current: 50mA
• Collector-emitter Voltage: 70V
• Package Type: PDIP-B
• Collector Current (dc) (max): 50mA
• Power Dissipation: 200mW
• Collector-emitter Saturation Voltage: 0.2V
• Fall Time: 18000ns
• Rise Time: 18000ns
• Pin Count: 4
• Mounting: Through Hole
• Operating Temp Range: -55C to 110C
• Operating Temperature Classification: Industrial
• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 20mA
• Output Voltage: 70V
• Opto Case Style: DIP
• No. Of Pins: 4
• Svhc: No SVHC (15-Dec-2010)
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2006 Fairchild Semiconductor Corporation
FOD814 Series, FOD817 Series Rev. 1.1.4
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
TOTAL DEVICE
EMITTER
DETECTOR
Symbol
T
V
V
T
T
P
OPR
V
P
P
STG
T
CEO
ECO
SOL
TOT
I
I
JC
C
F
R
D
C
J
Parameter
Storage Temperature
Operating Temperature
Lead Solder Temperature
Junction Temperature
Junction-to-Case Thermal Resistance
Total Power Dissipation
Continuous Forward Current
Reverse Voltage
Power Dissipation
Collector-Emitter Voltage
Emitter-Collector Voltage
Continuous Collector Current
Collector Power Dissipation
Derate above 100°C
Derate above 90°C
(T
A
= 25°C Unless otherwise specified.)
2
-55 to +105
FOD814
±50
260 for 10 sec
-55 to +150
125 Max.
Value
210
200
150
1.7
2.9
70
70
50
6
-55 to +110
FOD817
50
6
www.fairchildsemi.com
mW/°C
mW/°C
Units
°C/W
mW
mW
mW
mA
mA
°C
°C
°C
°C
V
V