FOD817B Fairchild Semiconductor, FOD817B Datasheet - Page 4

• Manufacturer Part Number: FOD817B
• Description: Transistor Output Optocouplers Phototransistor Output Optocoupler
• Manufacturer: Fairchild Semiconductor

Specifications of FOD817B

• Maximum Fall Time: 18 us
• Maximum Input Diode Current: 50 mA
• Maximum Reverse Diode Voltage: 6 V
• Maximum Rise Time: 18 us
• Output Device: Transistor
• Output Type: DC
• Configuration: 1
• Input Type: DC
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 200 mV
• Isolation Voltage: 5000 Vrms
• Current Transfer Ratio: 260 %
• Maximum Forward Diode Voltage: 1.4 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 200 mW
• Maximum Operating Temperature: + 110 C
• Minimum Operating Temperature: - 55 C
• Package / Case: PDIP Black
• Number Of Elements: 1
• Reverse Breakdown Voltage: 6V
• Forward Voltage: 1.4V
• Forward Current: 50mA
• Collector-emitter Voltage: 70V
• Package Type: PDIP-B
• Collector Current (dc) (max): 50mA
• Power Dissipation: 200mW
• Collector-emitter Saturation Voltage: 0.2V
• Fall Time: 18000ns
• Rise Time: 18000ns
• Pin Count: 4
• Mounting: Through Hole
• Operating Temp Range: -55C to 110C
• Operating Temperature Classification: Industrial
• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 20mA
• Output Voltage: 70V
• Opto Case Style: DIP
• No. Of Pins: 4
• Svhc: No SVHC (15-Dec-2010)
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2006 Fairchild Semiconductor Corporation
FOD814 Series, FOD817 Series Rev. 1.1.4
Electrical Characteristics
Isolation Characteristics
*Typical values at T
Notes:
1. Current Transfer Ratio (CTR) = I
2. For test circuit setup and waveforms, refer to page 7.
3. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common.
Symbol
R
C
V
ISO
ISO
ISO
Input-Output Isolation
Voltage
Isolation Resistance
Isolation Capacitance
Characteristic
(3)
A
= 25°C
C
/I
(T
F
A
x 100%.
FOD814,
FOD817
FOD814,
FOD817
FOD814,
FOD817
= 25°C Unless otherwise specified.) (Continued)
Device
f = 60Hz, t = 1 min,
I
V
V
I-O
Test Conditions
I-O
I-O
= 500VDC
= 0, f = 1 MHz
2µA
4
5x10
5000
Min.
10
1x10
Typ.*
0.6
11
Max.
1.0
www.fairchildsemi.com
Vac(rms)
Units
pf