AP603-PCB900 TriQuint, AP603-PCB900 Datasheet - Page 13

• Manufacturer Part Number: AP603-PCB900
• Description: RF Modules & Development Tools 869-960MHz Eval Brd 17dB Gain
• Manufacturer: TriQuint

Specifications of AP603-PCB900

• Board Size: 6 mm x 5 mm x 1 mm
• Minimum Frequency: 869 MHz
• Minimum Operating Temperature: - 40 C
• Supply Voltage (min): 28 V
• Product: RF Development Tools
• Maximum Frequency: 960 MHz
• Output Power: 7 W
• Supply Voltage (max): 80 V
• Supply Current: 246 mA
• Maximum Operating Temperature: + 85 C
• For Use With/related Products: AP603
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 1067337

WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: [phone] • e-mail: [e-mail] • Web site: www.wj.com, www.TriQuint.com
Typical WCDMA Performance at 25 °C
Frequency
W-CDMA Channel Power
Power Gain
Input Return Loss
Output Return Loss
ACLR
Operating Current, Icc
Collector Efficiency
Output P1dB
Quiescent Current, Icq
Vpd, Vbias
Vcc
-30
-40
-50
-60
-70
13
12
11
10
9
8
at a channel power of +32 dBm
2110-2170 MHz High Efficiency Application Circuit Performance Plots
20
22
Single-carrier WCDMA TM 1+64 DPCH,
No Clipping, PAR = 9.5 dB @ 0.01% CCDF
DPD Corrected, Upper / Lower
DPD Correction vs ACLR vs. Output Power
AP603
High Dynamic Range 7W 28V HBT Amplifier
CW tone, 2140 MHz, Vcc = 28V, Icq = 40 mA, 25 ˚C
WCDMA, 2140 MHz, Vcc = 28V, Icq = 40 mA, 25 ˚C
24
24
Average Output Power (dBm)
Gain vs. Output Power
Output Power (dBm)
28
26
2110-2170 MHz High Efficiency Reference Design
Uncorrected, Upper / Lower
32
28
+38.5 dBm
2140 MHz
+32 dBm
170 mA
11.5 dB
-34 dBc
32.5 %
40 mA
30
36
+28 V
20 dB
11 dB
+5 V
Targeted for Linearized Power Amplifiers
32
40
-30
-40
-50
-60
-70
180
160
140
120
100
80
60
22
Notes:
1. The primary RF microstrip line is 50 Ω.
2. Components shown on the silkscreen but not on the schematic are not used.
3. The center of C22 is placed at 0.185” (17.3° @ 2140 MHz) from the center of C1.
4. The center of C1 is placed at 0.875” (81.6° @ 2140 MHz) from the center of C5.
5. The center of C5 is placed at 0.070” (6.5° @ 2140 MHz) from the edge of the AP603 (U1).
6. The center of C28 is placed at 0.190” (17.7° @ 2140 MHz) from the edge of the AP603 (U1).
7. The center of C29 is placed at 0.300” (28.0° @ 2140 MHz) from the center of C28.
8. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a ¼ λ.
22
Single-carrier WCDMA TM 1+64 DPCH,
69% Clipping, PAR = 8.6 dB @ 0.01% CCDF
Single-carrier WCDMA TM 1+64 DPCH,
69% Clipping, PAR = 8.6 dB @ 0.01% CCDF
DPD Corrected, Upper / Lower
DPD Correction vs ACLR vs. Output Power
WCDMA, 2140 MHz, Vcc = 28V, Icq = 40 mA, 25 ˚C
24
0.8pF
See note 3
24
Average Output Power (dBm)
2140 MHz, Vcc = 28V, Icq = 40 mA, 25 ˚C
Average Output Power (dBm)
See note 4
Icc vs. Output Power
26
26
Uncorrected, Upper / Lower
28
28
30
30
3.6 pF
See note 5
32
32
Specifications and information are subject to change without notice
1000pF
C7
-30
-40
-50
-60
-70
40
30
20
10
0
22
22
Single-carrier WCDMA TM 1+64 DPCH,
69% Clipping, PAR = 8.6 dB @ 0.01% CCDF
Single-carrier WCDMA TM 1+64 DPCH,
33% Clipping, PAR = 6.6 dB @ 0.01% CCDF
DPD Corrected, Upper / Lower
DPD Correction vs ACLR vs. Output Power
WCDMA, 2140 MHz, Vcc = 28V, Icq = 40 mA, 25 ˚C
2.3 kΩ
24
24
Average Output Power (dBm)
Average Output Power (dBm)
2140 MHz, Vcc = 28V, Icq = 40 mA, 25 ˚C
Efficiency vs. Output Power
26
26
W = 0.030”
L = 0.980”
Uncorrected, Upper / Lower
C28
3.6 pF
See note 6
Page 13 of 14 May 2007 ver 1
28
28
C29
0.4 pF
See note 7
C21
30
30
32
32