MAX1441GUP/V+ Maxim Integrated Products, MAX1441GUP/V+ Datasheet - Page 31

Touch Screen Converters & Controllers PROXIMITY SENSR el Proximity and Tou

MAX1441GUP/V+

Manufacturer Part Number
MAX1441GUP/V+
Description
Touch Screen Converters & Controllers PROXIMITY SENSR el Proximity and Tou
Manufacturer
Maxim Integrated Products
Datasheet

Specifications of MAX1441GUP/V+

Lead Free Status / RoHS Status
Lead free / RoHS Compliant
There are three distinct memory areas in the IC's regis-
ters, program memory, and data memory. All memories
are located on-chip.
Data memory is realized by SRAM memory, which allows
both read and write access; program memory is imple-
mented with nonvolatile Flash memory. The user applica-
tion codes are programmed using a bootstrap loader.
The bootstrap loader program is located in the utility code
space. From a user perspective, the utility code segment
is a program segment in the program memory map.
As illustrated in Figure 3, the device incorporates 4KB
program memory, 4KB Utility ROM, and 128 bytes SRAM
data memory.
Data memory is contiguous from 0000h to 03Fh words.
Programmable memory begins at address 0000h and is
contiguous through a maximum of 7FFh words.
The device also incorporates a soft stack using data
RAM for the stack.
Figure 3. Memory Map
Automotive, Two-Channel Proximity and
Memory Organization
REGISTERS
0Fh
07h
06h
00h
1Fh
SPRs
SFRs
FFh
FFFFh
87FFh
8000h
07FFh
0000h
UTILITY CODE
PROGRAM
PROGRAM
MEMORY
2K x 16
2K x 16
SPACE
The MMU provides access controls for program and
data memories. The built-in bootstrap loader is used to
support Flash memory erase/program operations.
Two of the register modules (M0/M1) are used by the
device.
On-chip data memory begins at address 0000h and is
contiguous through the internal data memory space to
03Fh words (128 bytes).
Data memory mapping and access control are handled
by the MMU. Read/write access to the data memory can
be in word or in byte.
The program memory is implemented using nonvola-
tile Flash memory. Flash memory provides in-system
programming capability but this memory technology
requires erase operation before a write operation and the
time required to carry out write access is extremely long.
Write access to nonvolatile memory is actually performed
by utility ROM code for the device.
WBSn = 1
FFFFh
003Fh
0000h
DATA RAM
64 x 16
SPACE
DATA
Touch Sensor
WBSn = 0
FFFFh
007Fh
0000h
Program Memory
Register Space
Data Memory
31

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