BSM50GD120DN2 Infineon Technologies, BSM50GD120DN2 Datasheet - Page 7

• Manufacturer Part Number: BSM50GD120DN2
• Description: IGBT Modules 1200V 50A FL BRIDGE
• Manufacturer: Infineon Technologies

Specifications of BSM50GD120DN2

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.5 V
• Continuous Collector Current At 25 C: 72 A
• Gate-emitter Leakage Current: 200 nA
• Power Dissipation: 350 W
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: 20 V
• Mounting Style: Screw
• Package / Case: EconoPACK 2A
• Module Configuration: Six
• Dc Collector Current: 72A
• Collector Emitter Voltage Vces: 3V
• Power Dissipation Pd: 350W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +125°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BSM 50 GD 120 DN2
Typ. switching time
I = f (I
Typ. switching losses
E = f (I
par.: V
par.: V
E
t
mWs
10
10
10
C
ns
25
15
10
C
) , inductive load , T
CE
CE
5
0
3
2
1
) , inductive load , T
0
0
= 600 V, V
= 600 V, V
20
20
40
40
GE
GE
= ± 15 V, R
= ± 15 V, R
60
60
j
j
= 125°C
= 125°C
80
80
G
G
= 22
= 22
A
A
tdoff
tr
tf
tdon
I
Eon
Eoff
I
C
C
120
120
7
Typ. switching time
t = f (R
Typ. switching losses
E = f (R
par.: V
par.: V
E
t
mWs
10
10
10
10
ns
25
15
10
G
CE
CE
5
0
4
3
2
1
G
) , inductive load , T
0
0
) , inductive load , T
= 600 V, V
= 600V, V
20
20
40
40
GE
GE
= ± 15 V, I
= ± 15 V, I
60
60
j
j
= 125°C
= 125°C
80
80
C
C
= 50 A
= 50 A
2006-01-31
tdoff
tr
tdon
tf
R
Eon
Eoff
R
G
G
120
120