BSM50GD120DN2 Infineon Technologies, BSM50GD120DN2 Datasheet - Page 9

• Manufacturer Part Number: BSM50GD120DN2
• Description: IGBT Modules 1200V 50A FL BRIDGE
• Manufacturer: Infineon Technologies

Specifications of BSM50GD120DN2

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.5 V
• Continuous Collector Current At 25 C: 72 A
• Gate-emitter Leakage Current: 200 nA
• Power Dissipation: 350 W
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: 20 V
• Mounting Style: Screw
• Package / Case: EconoPACK 2A
• Module Configuration: Six
• Dc Collector Current: 72A
• Collector Emitter Voltage Vces: 3V
• Power Dissipation Pd: 350W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +125°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BSM 50 GD 120 DN2
Gehäusemaße / Schaltbild
Package outline / Circuit diagramm
8
2006-01-31