BSM25GP120 Infineon Technologies, BSM25GP120 Datasheet - Page 7

• Manufacturer Part Number: BSM25GP120
• Description: IGBT Modules 1200V 25A PIM
• Manufacturer: Infineon Technologies

Specifications of BSM25GP120

• Configuration: Array 7
• Collector- Emitter Voltage Vceo Max: 1600 V
• Collector-emitter Saturation Voltage: 2.55 V
• Continuous Collector Current At 25 C: 45 A
• Gate-emitter Leakage Current: 300 nA
• Power Dissipation: 230 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPIM2
• Channel Type: N
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 24
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
4,5
3,5
2,5
1,5
0,5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
0
0
Schaltverluste Wechselr. (typisch)
Switching losses Inverter (typical)
Schaltverluste Wechselr. (typisch)
Switching losses Inverter (typical)
5
10
10
Eon
Eoff
Erec
Eon
Eoff
Erec
15
BSM25GP120
20
20
R
I
C
G
[A]
7(11)
E
[ ]
T
E
T
on
j
= 125°C,
j
on
= 125°C, V
= f (I
30
25
= f (R
C
), E
G
), E
GE
off
30
V
= +-15 V ,
off
GE
= f (I
= ±15 V,
= f (R
40
C
), E
35
G
), E
rec
I
c
= I
= f (I
rec
nenn
R
Gon
40
= f (R
C
,
)
= R
50
V
V
CC
CC
G
Goff
)
=
=
=
45
600 V
27 Ohm
600 V
60
50
DB-PIM-10.xls