BSM25GP120 Infineon Technologies, BSM25GP120 Datasheet - Page 8
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BSM25GP120
Manufacturer Part Number
BSM25GP120
Description
IGBT Modules 1200V 25A PIM
Manufacturer
Infineon Technologies
Datasheet
1.BSM25GP120.pdf
(12 pages)
Specifications of BSM25GP120
Configuration
Array 7
Collector- Emitter Voltage Vceo Max
1600 V
Collector-emitter Saturation Voltage
2.55 V
Continuous Collector Current At 25 C
45 A
Gate-emitter Leakage Current
300 nA
Power Dissipation
230 W
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
EconoPIM2
Channel Type
N
Gate To Emitter Voltage (max)
±20V
Pin Count
24
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BSM25GP120
Manufacturer:
TE
Quantity:
2 000
Company:
Part Number:
BSM25GP120
Manufacturer:
EUPEC
Quantity:
25
Part Number:
BSM25GP120
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BSM25GP120
Quantity:
50
Company:
Part Number:
BSM25GP120-B2
Manufacturer:
TI
Quantity:
104
Company:
Part Number:
BSM25GP120G
Manufacturer:
EUPEC/Infineon
Quantity:
1 000
IGBT-Module
IGBT-Modules
Technische Information / Technical Information
0,01
0,1
10
60
50
40
30
20
10
1
0
0,001
0
Sicherer Arbeitsbereich Wechselr. (RBSOA)
Reverse bias save operating area Inverter (RBSOA)
Transienter Wärmewiderstand Wechselr.
Transient thermal impedance Inverter
200
Zth-IGBT
Zth-FWD
0,01
400
BSM25GP120
IC,Modul
IC,Chip
V
600
CE
t [s]
8(11)
[V]
0,1
800
Z
thJC
T
vj
= 125°C, V
= f (t)
1000
I
C
= f (V
1
GE
CE
= ±15V, R
)
1200
G
=
27 Ohm
1400
10
DB-PIM-10.xls