FZ600R12KE3 Infineon Technologies, FZ600R12KE3 Datasheet - Page 2

• Manufacturer Part Number: FZ600R12KE3
• Description: IGBT Modules 1200V 600A SINGLE
• Manufacturer: Infineon Technologies

Specifications of FZ600R12KE3

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 1.7 V
• Continuous Collector Current At 25 C: 900 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 2800 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: 62MM
• Dc Collector Current: 900A
• Collector Emitter Voltage Vces: 2.15V
• Power Dissipation Pd: 2.8kW
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +125°C
• Transistor Case Style: Module
• Rohs Compliant: Yes
• Ic (max): 600.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3
• Housing: 62 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
Diode-Wechselrichter / diode-inverter
Höchstzulässige Werte / maximum rated values
Charakteristische Werte / characteristic values
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