TISP8201HDMR-S Bourns Inc., TISP8201HDMR-S Datasheet - Page 3

• Manufacturer Part Number: TISP8201HDMR-S
• Description: Sidacs Buffered N-Gate SCR Dual
• Manufacturer: Bourns Inc.

Specifications of TISP8201HDMR-S

• Breakover Voltage Vbo: 82 V
• Breakover Current Ibo Max: 60 A
• Rated Repetitive Off-state Voltage Vdrm: 120 V
• On-state Rms Current (it Rms): 3.5 A, 7 A, 14 A, 60 A
• Off-state Leakage Current @ Vdrm Idrm: 0.005 mA
• Off-state Capacitance Co: 30 pF, 50 pF
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

OCTOBER 2005 — REVISED MAY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Repetitive peak off-state voltage, V
Repetitive peak reverse voltage, V
Non-repetitive peak impulse current (see Notes 5, 6 and 7)
Non-repetitive peak on-state current, 50/60 Hz (see Notes 5, 6, 7 and 8)
Junction temperature
Storage temperature range
NOTES: 5. Initially the device must be in thermal equilibrium with T
Recommended Operating Conditions
C1, C2 Gate decoupling capacitor
TISP8200HDM Electrical Characteristics, T A = 25 °C (Unless Otherwise Noted)
TISP8201HDM Absolute Maximum Ratings, T
V
V
I
I
DRM
RRM
I
C
(BO)
(BO)
I
GT
H
O
2/10 µs (Telcordia GR-1089-CORE, 2/10 µs voltage wave shape)
5/310 µs (ITU-T K.44, 10/700 µs voltage wave shape used in K.20/21/45)
10/1000 µs (Telcordia GR-1089-CORE, 10/1000 µs voltage wave shape)
10 ms
1 s
7 s
900 s
TISP820xHDM Overvoltage Protectors
6. These non-repetitive rated currents are peak values. The rated current values may be applied to any cathode-anode terminal pair.
7. Rated currents only apply if pins 1 & 8 (A1, Tip) are connected together, pins 4 & 5 (A2, Ring) are connected together and pins
8. These non-repetitive rated terminal currents are for the TISP8200HDM and TISP8201HDM together. Device (A)-terminal positive
Repetitive peak off-state current
Repetitive peak reverse current
Impulse breakover voltage
conditions.
6 & 7 (K, Ground) are connected together.
current values are conducted by the TISP8201HDM and (K)-terminal negative current values by the TISP8200HDM.
Off-state capacitance
Gate trigger current
P
Breakover voltage
a
Holding current
a r
m
t e
r e
GK
GA
=
=
7
0
0
V
V
V
dv/dt = -250 V/ms, R
dv/dt
Maximum ramp value = -500 V
di/dt = -20 A/µs, Linear current ramp,
Maximum ramp value = -10 A
V
(I
(I
f = 1 MHz, V
K
K
D
R
GA
) I
) I
R
= V
= V
T
T
= -80 V
t a
= -1 A, di/dt = 1 A/ms, V
= -5 A, t
S
A
DRM
RRM
n i
e
-1000 V/µs, Linear voltage ramp,
= 25 °C (Unless Otherwise Noted)
e
g
F
, V
, V
g i
d
GK
GA
u
p(g)
= 1 V rms, Gate open
e r
=
=
3
7 -
0
20 µs, V
0
SOURCE
V
J
= 25 °C. The surge may be repeated after the device returns to its initial
T
GA
e
= 300
t s
GA
=
C
8 -
=
o
0
n
8 -
d
V
0
t i
V
V
o i
GA
n
s
=
8 -
0
V
V
S
V
D
I
V
V
D
y
PPSM
I
= -50 V
T
TSM
m
DRM
RRM
T
stg
= -2 V
J
b
l o
M
1 -
M
n i
-55 to +150
-65 to +150
5
n i
0
V
-120
220
120
500
150
100
y T
a
3.5
60
14
y T
7
u l
p
p
e
M
M
8 -
-90
1
65
30
5 -
a
5
a
5
x
2
x
U
U
U
°C
°C
nF
m
m
V
A
A
n
µ
µ
pF
n
V
V
n
A
A
t i
A
A
t i
t i