TISP8201HDMR-S Bourns Inc., TISP8201HDMR-S Datasheet - Page 4

• Manufacturer Part Number: TISP8201HDMR-S
• Description: Sidacs Buffered N-Gate SCR Dual
• Manufacturer: Bourns Inc.

Specifications of TISP8201HDMR-S

• Breakover Voltage Vbo: 82 V
• Breakover Current Ibo Max: 60 A
• Rated Repetitive Off-state Voltage Vdrm: 120 V
• On-state Rms Current (it Rms): 3.5 A, 7 A, 14 A, 60 A
• Off-state Leakage Current @ Vdrm Idrm: 0.005 mA
• Off-state Capacitance Co: 30 pF, 50 pF
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NOTE
R
Thermal Characteristics
V
V
TISP8201HDM Electrical Characteristics, T A = 25 °C (Unless Otherwise Noted)
I
I
DRM
RRM
I
C
θJA
(BO)
(BO)
I
GT
H
O
TISP820xHDM Overvoltage Protectors
Junction to ambient thermal resistance
9. EIA/JESD51-7 high effective thermal conductivity test board (multi-layer) connected with 0.6 mm printed wiring track widths.
Repetitive peak off-state current
Repetitive peak reverse current
Impulse breakover voltage
Off-state capacitance
Gate trigger current
P
Breakover voltage
a
Holding current
P
a r
a
a r
m
m
t e
t e
r e
r e
V
V
dv/dt = 250 V/ms, R
dv/dt
Maximum ramp value = 500 V
di/dt = 20 A/µs, Linear current ramp,
Maximum ramp value = 10 A
V
(I
(I
f = 1 MHz, V
A
A
D
R
GK
) I
) I
= V
= V
EIA/JESD51-7 PCB, EIA/JESD51-2 Environment, P
(See Note 9)
T
T
= 80 V
= 1 A, di/dt = -1 A/ms, V
= 5 A, t
DRM
RRM
1000 V/µs, Linear voltage ramp,
, V
, V
d
p(g)
GA
GK
= 1 V rms, Gate open
=
=
0
7
20 µs, V
0
SOURCE
V
GK
T
e
= 300
T
t s
=
GK
e
t s
8
C
0
=
o
C
V
n
Customers should verify actual device performance in their specific applications.
8
o
d
0
n
V
t i
V
d
GK
o i
t i
n
o i
=
s
n
8
s
0
V
TOT
Specifications are subject to change without notice.
= 4 W
V
V
D
D
= 50 V
= 2 V
OCTOBER 2005 — REVISED MAY 2007
M
M
2
0
n i
n i
y T
y T
55
p
p
M
M
1 -
50
30
8
90
5 -
a
5
a
2
5
x
x
°C/W
U
U
m
m
µ
µ
pF
n
V
V
n
A
A
A
A
t i
t i