TISP8201HDMR-S Bourns Inc., TISP8201HDMR-S Datasheet - Page 5

• Manufacturer Part Number: TISP8201HDMR-S
• Description: Sidacs Buffered N-Gate SCR Dual
• Manufacturer: Bourns Inc.

Specifications of TISP8201HDMR-S

• Breakover Voltage Vbo: 82 V
• Breakover Current Ibo Max: 60 A
• Rated Repetitive Off-state Voltage Vdrm: 120 V
• On-state Rms Current (it Rms): 3.5 A, 7 A, 14 A, 60 A
• Off-state Leakage Current @ Vdrm Idrm: 0.005 mA
• Off-state Capacitance Co: 30 pF, 50 pF
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

OCTOBER 2005 — REVISED MAY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Parameter Measurement Information
TISP820xHDM Overvoltage Protectors
-v
-v
Characteristic
Quadrant III
Switching
Characteristic
Quadrant III
I
Blocking
V
RRM
V
(BO)
GK(BO)
V
V
RRM
GA
Figure 1. TISP8200HDM KA Terminal Characteristic
Figure 2. TISP8201HDM AK Terminal Characteristic
V
V
R
D
I
PPSM
I
TSM
I
I
I
H
D
R
+i
-i
+i
-i
I
I
I
I
I
D
PPSM
H
R
TSM
V
V
R
D
Characteristic
Quadrant I
Blocking
Characteristic
Quadrant I
V
Switching
RRM
V
V
GK
GA(BO)
I
PM8XABBa
RRM
V
(BO)
PM8XACBa
+v
+v