BFP 640F E6327 Infineon Technologies
![no-image](/images/manufacturer_photos/0/3/327/infineon_technologies_sml.jpg)
BFP 640F E6327
Manufacturer Part Number
BFP 640F E6327
Description
RF Bipolar Small Signal TRANS GP BJT NPN 4V 0.05A
Manufacturer
Infineon Technologies
Specifications of BFP 640F E6327
Dc Collector/base Gain Hfe Min
110 @ 30mA @ 3V
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Configuration
Single Dual Emitter
Transistor Polarity
NPN
Maximum Operating Frequency
40000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
4 V
Emitter- Base Voltage Vebo
1.2 V
Continuous Collector Current
0.05 A
Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Package / Case
TSFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BFP640FE6327XT