BFP 640F H6327 Infineon Technologies, BFP 640F H6327 Datasheet

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BFP 640F H6327

Manufacturer Part Number
BFP 640F H6327
Description
TRANS RF NPN 4V 50MA TSFP-4
Manufacturer
Infineon Technologies
Datasheet

Specifications of BFP 640F H6327

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
4.5V
Frequency - Transition
40GHz
Noise Figure (db Typ @ F)
0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
Gain
23dB
Power - Max
200mW
Dc Current Gain (hfe) (min) @ Ic, Vce
110 @ 30mA, 3V
Current - Collector (ic) (max)
50mA
Mounting Type
Surface Mount
Package / Case
TSFP-4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
NPN Silicon Germanium RF Transistor*
* Short term description
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP640F
1
Pb-containing package may be available upon special request
High gain low noise RF transistor
Provides outstanding performance
Ideal for CDMA and WLAN applications
Outstanding noise figure F = 0.65 dB at 1.8 GHz
High maximum stable gain
Gold metallization for extra high reliability
70 GHz f
Pb-free (RoHS compliant) package
Qualified according AEC Q101
for a wide range of wireless applications
Outstanding noise figure F = 1.2 dB at 6 GHz
G
ms
= 23 dB at 1.8 GHz
T
-Silicon Germanium technology
Marking
R4s
1=B
1)
2=E
Pin Configuration
3=C
1
4=E
-
Direction of Unreeling
-
4
Top View
3
4
1
XYs
Package
TSFP-4
3
2
2007-05-31
1
BFP640F
2

Related parts for BFP 640F H6327

BFP 640F H6327 Summary of contents

Page 1

NPN Silicon Germanium RF Transistor* High gain low noise RF transistor Provides outstanding performance for a wide range of wireless applications Ideal for CDMA and WLAN applications Outstanding noise figure 1.8 GHz Outstanding noise figure ...

Page 2

Maximum Ratings Parameter Collector-emitter voltage T 0° 0°C A Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current 1) Total power dissipation T 92°C S Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter 2) Junction - ...

Page 3

Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA GHz C CE Collector-base capacitance MHz ...

Page 4

... MJS = 3 - XTI = TITF1 -0.0065 - All parameters are ready to use, no scalling is necessary. Package Equivalent Circuit: For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com - BF = 450 A IKF = 0. IKR = 3 ...

Page 5

Total power dissipation P tot 200 mW 160 140 120 100 105 120 °C Permissible Pulse Load totmax totDC p 1 ...

Page 6

Third order Intercept Point IP (Output = parameter 1.8 GHz CE 30 dBm Power gain G , ...

Page 7

Power gain 30mA parameter 0.5 1 1.5 2 2.5 Noise figure ...

Page 8

Source impedance for min. noise figure vs. frequency mA 1.5 0.5 0.4 0 5.0mA c 0.2 3GHz 2.4GHz 0.1 1.8GHz 0.9GHz 4GHz 0.1 0.2 0.3 0.4 ...

Page 9

Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package TSFP-4 1.4 ±0.05 0.55 ±0.04 0.2 ±0. 0.2 0.15 ±0.05 ±0.05 0.5 ...

Page 10

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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