HN4B01JE(TE85L,F) Toshiba, HN4B01JE(TE85L,F) Datasheet
HN4B01JE(TE85L,F)
Specifications of HN4B01JE(TE85L,F)
Related parts for HN4B01JE(TE85L,F)
HN4B01JE(TE85L,F) Summary of contents
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... TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications Q1: High voltage and high current : V = 50V 150mA (max) CEO C High 120~400 FE FE Excellent h linearity 0.1mA Q2: High voltage and high current = −50V − ...
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Electrical Characteristics Q1 Characteristic Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Electrical Characteristics Q2 Characteristic Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector ...
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Q1 (NPN transistor) 3 HN4B01JE 2007-11-01 ...
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Q2 (PNP transistor) 4 HN4B01JE 2007-11-01 ...
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Q2 Common – 200 150 100 100 AMBIENT TEMPERATURE Ta (°C) *:Total Rating 125 150 175 5 HN4B01JE 2007-11-01 ...
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... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...