HN4B01JE(TE85L,F) Toshiba, HN4B01JE(TE85L,F) Datasheet - Page 3

• Manufacturer Part Number: HN4B01JE(TE85L,F)
• Description: RF Bipolar Small Signal Vceo=-50V, Vceo=50V
• Manufacturer: Toshiba

Specifications of HN4B01JE(TE85L,F)

• Dc Collector/base Gain Hfe Min: 120
• Dc Current Gain Hfe Max: 400
• Mounting Style: SMD/SMT
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Maximum Operating Frequency: 80 MHz
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 150 mA
• Power Dissipation: 100 mW
• Package / Case: ESV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

HN4B01JE
Q1 (NPN transistor)
3
2007-11-01