SIHF22N60S-E3 Vishay, SIHF22N60S-E3 Datasheet - Page 2

• Manufacturer Part Number: SIHF22N60S-E3
• Description: MOSFET Power 600V N-Channel Super junction TO-220FP
• Manufacturer: Vishay

Specifications of SIHF22N60S-E3

• Transistor Polarity: N-Channel
• Gate Charge Qg: 75 nC
• Resistance Drain-source Rds (on): 0.16 Ohms
• Forward Transconductance Gfs (max / Min): 9.4 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 22 A
• Power Dissipation: 250 W
• Mounting Style: Through Hole
• Package / Case: TO-220 FP
• Continuous Drain Current Id: 22A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 160mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Power Dissipation Pd: 250W
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: TO-220FP
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

SiHF22N60S
Vishay Siliconix
Note
a. C
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
(Time Related)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
DS
oss eff.
Temperature Coefficient
(TR) is a fixed capacitance that gives the same charging time as C
a
J
= 25 °C, unless otherwise noted)
C
SYMBOL
oss eff.
ΔV
R
V
t
t
I
I
C
V
I
C
C
Q
V
GS(th)
DS(on)
Q
d(on)
d(off)
I
RRM
GSS
DSS
g
Q
Q
DS
R
SM
I
t
oss
t
t
DS
SD
iss
rss
S
rr
fs
gs
gd
r
f
g
rr
g
/T
(TR)
J
a
SYMBOL
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
V
R
R
V
V
GS
GS
thJC
thJA
GS
DS
T
Reference to 25 °C, I
= 10 V
= 10 V
J
= 0 V
= 600 V, V
dI/dt = 100 A/μs, V
= 25 °C, I
V
V
V
R
f = 1 MHz, open drain
V
TEST CONDITIONS
V
DS
DS
DD
g
DS
T
GS
= 9.1 Ω, V
J
= 600 V, V
= V
= 380 V, I
V
= 50 V, I
= 25 °C, I
oss
= 0 V, I
f = 1.0 MHz
V
GS
V
DS
GS
GS
S
GS
I
while V
D
= ± 20 V
= 22 A, V
, I
= 25 V,
V
= 0 V,
= 22 A, V
= 0 V, T
TYP.
DS
D
D
GS
-
-
D
= 250 μA
D
= 1 mA
F
GS
= 0 V to 480 V
I
= 13 A
D
= 22 A,
DS
= 10 V
= I
R
D
= 0 V
= 22 A
= 25 V
S
is rising from 0 % to 80 % V
J
GS
= 1 mA
,
DS
= 150 °C
G
= 0 V
= 480 V
D
S
MIN.
600
MAX.
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
3.4
65
S10-1236-Rev. B, 24-May-10
Document Number: 91394
0.160
TYP.
2810
1480
0.65
0.70
155
462
9.4
8.3
33
75
17
25
24
68
77
59
30
DS
-
-
-
-
-
-
-
-
.
MAX.
± 100
0.190
100
4.0
1.2
22
88
5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
UNIT
V/°C
nA
μA
nC
μC
pF
ns
ns
Ω
Ω
V
V
S
A
V
A