SIHF22N60S-E3 Vishay, SIHF22N60S-E3 Datasheet - Page 3

• Manufacturer Part Number: SIHF22N60S-E3
• Description: MOSFET Power 600V N-Channel Super junction TO-220FP
• Manufacturer: Vishay

Specifications of SIHF22N60S-E3

• Transistor Polarity: N-Channel
• Gate Charge Qg: 75 nC
• Resistance Drain-source Rds (on): 0.16 Ohms
• Forward Transconductance Gfs (max / Min): 9.4 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 22 A
• Power Dissipation: 250 W
• Mounting Style: Through Hole
• Package / Case: TO-220 FP
• Continuous Drain Current Id: 22A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 160mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Power Dissipation Pd: 250W
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: TO-220FP
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 91394
S10-1236-Rev. B, 24-May-10
Fig. 2 - Typical Output Characteristics, T
Fig. 1 - Typical Output Characteristics, T
50
40
30
20
10
30
24
18
12
0
6
0
0
0
V
V
4
4
DS
DS
4 .0 V
4 V
, Drain-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
8
8
12
12
16
16
Bottom 4 V
Bottom 4 V
T
T
Top 15 V
J
J
Top 15 V
20
20
=
J
= 25
J
150 °C
= 150 °C
14 V
13 V
12 V
11 V
10 V
= 25 °C
14 V
13 V
12 V
11 V
10 V
V
9 V
8 V
7 V
6 V
5 V
V
9 V
8 V
7 V
6 V
5 V
GS
GS
°C
24
24
Fig. 4 - Normalized On-Resistance vs. Temperature
3.5
2.5
1.5
0.5
60
50
40
30
20
10
3
2
1
0
0
- 60 - 40 - 20 0
2
Fig. 3 - Typical Transfer Characteristics
I
V
D
GS
= 22 A
T
= 10 V
V
J ,
GS ,
Junction Temperature (°C)
T
4
J
= 150 °C
Gate-to-Source Voltage (V)
20 40 60 80 100 120 140 160 180
6
Vishay Siliconix
SiHF22N60S
T
J
8
= 25 °C
www.vishay.com
10
3