SIHF22N60S-E3 Vishay, SIHF22N60S-E3 Datasheet - Page 4

• Manufacturer Part Number: SIHF22N60S-E3
• Description: MOSFET Power 600V N-Channel Super junction TO-220FP
• Manufacturer: Vishay

Specifications of SIHF22N60S-E3

• Transistor Polarity: N-Channel
• Gate Charge Qg: 75 nC
• Resistance Drain-source Rds (on): 0.16 Ohms
• Forward Transconductance Gfs (max / Min): 9.4 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 22 A
• Power Dissipation: 250 W
• Mounting Style: Through Hole
• Package / Case: TO-220 FP
• Continuous Drain Current Id: 22A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 160mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Power Dissipation Pd: 250W
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: TO-220FP
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

SiHF22N60S
Vishay Siliconix
www.vishay.com
4
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
100 000
10 000
1000
12.0
10.0
100
8.0
6.0
4.0
2.0
0.0
10
1
0
I
C
D
C
10
rss
= 22 A
oss
V
V
DS ,
DS
20
= 120 V
Q
Drain-to-Source Voltage (V)
V
G
30
DS
, Total Gate Charge (nC)
= 300 V
V
40
C
DS
V
C
C
iss
GS
rss
oss
= 480 V
= 0 V, f = 1 MHz
10
50
= C
= C
= C
gs
ds
gd
60 70
+ C
+ C
gd
gd
• C
80
ds
shorted
90 100
C
iss
100
0.0001
0.001
1000
1000
0.01
Fig. 7 - Typical Source-Drain Diode Forward Voltage
100
100
0.1
0.1
10
10
1
1
0.2
1
T
T
Single Pulse
Operation in this area limited
Fig. 8 - Maximum Safe Operating Area
C
J
T
= 150 °C
= 25 °C
J
= 150 °C
0.4
V
V
SD
DS
by R
10
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
DS(on)
0.6
100
0.8
T
J
S10-1236-Rev. B, 24-May-10
= 25 °C
Document Number: 91394
1
1000
10 ms
1 ms
100 µs
V
GS
1.2
= 0 V
10 000
1.4