SUP90P06-09L-E3 Vishay, SUP90P06-09L-E3 Datasheet - Page 3

• Manufacturer Part Number: SUP90P06-09L-E3
• Description: MOSFET Power 60V 90A 250W 9.3mohm @ 10V
• Manufacturer: Vishay

Specifications of SUP90P06-09L-E3

• Transistor Polarity: P-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0093 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 90 A
• Power Dissipation: 2400 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Continuous Drain Current Id: 90A
• Drain Source Voltage Vds: -80V
• On Resistance Rds(on): 9.3mohm
• Rds(on) Test Voltage Vgs: -10V
• Voltage Vgs Max: -20V
• Operating Temperature Range: -55°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 73010
S10-2545-Rev. B, 08-Nov-10
15 000
12 000
9000
6000
3000
200
160
120
200
160
120
80
40
80
40
0
0
0
0
0
0
C
rss
10
10
2
C
V
V
DS
20
oss
DS
Output Characteristics
V
Transconductance
- Drain-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
GS
5 V
I
20
D
Capacitance
30
= 10 V thru 6 V
- Drain Current (A)
C
4
iss
40
30
2 V
6
50
40
60
T
C
8
= - 55 °C
50
4 V
3 V
125 °C
70
25 °C
10
80
60
0.020
0.016
0.012
0.008
0.004
0.000
200
160
120
80
40
20
16
12
0
8
4
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
0
0
V
I
D
DS
40
= 90 A
V
On-Resistance vs. Drain Current
20
= 30 V
GS
V
= 4.5 V
Transfer Characteristics
80
GS
Q
g
- Gate-to-Source Voltage (V)
I
40
D
- Total Gate Charge (nC)
120
- Drain Current (A)
Gate Charge
T
C
25 °C
SUP90P06-09L
= 125 °C
160
60
Vishay Siliconix
200
- 55 °C
80
www.vishay.com
V
240
GS
= 10 V
100
280
120
320
3