SUP90P06-09L-E3 Vishay, SUP90P06-09L-E3 Datasheet - Page 5

MOSFET Power 60V 90A 250W 9.3mohm @ 10V

SUP90P06-09L-E3

Manufacturer Part Number
SUP90P06-09L-E3
Description
MOSFET Power 60V 90A 250W 9.3mohm @ 10V
Manufacturer
Vishay
Datasheet

Specifications of SUP90P06-09L-E3

Transistor Polarity
P-Channel
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.0093 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
90 A
Power Dissipation
2400 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220AB
Continuous Drain Current Id
90A
Drain Source Voltage Vds
-80V
On Resistance Rds(on)
9.3mohm
Rds(on) Test Voltage Vgs
-10V
Voltage Vgs Max
-20V
Operating Temperature Range
-55°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SUP90P06-09L-E3
Manufacturer:
IXYS
Quantity:
5 000
Company:
Part Number:
SUP90P06-09L-E3
Quantity:
3 050
Company:
Part Number:
SUP90P06-09L-E3
Quantity:
3 050
THERMAL RATINGS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73010.
Document Number: 73010
S10-2545-Rev. B, 08-Nov-10
0.01
200
150
100
0.1
50
0
2
1
10
0
-4
0.2
Single Pulse
Duty Cycle = 0.5
Maximum Avalanche and Drain Current
by Package
25
Limited
0.02
0.05
T
50
vs. Case Temperature
C
- Case Temperature (°C)
0.1
75
100
10
Normalized Thermal Transient Impedance, Junction-to-Case
-3
125
150
Square Wave Pulse Duration (s)
175
10
-2
1000
100
0.1
10
1
0.1
Limited by R
* V
GS
> minimum V
V
DS
Single Pulse
DS(on)
Safe Operating Area
T
- Drain-to-Source Voltage (V)
C
1
= 25 °C
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
*
P
DM
GS
10
JM
-1
at which R
- T
SUP90P06-09L
t
A
1
= P
t
2
Vishay Siliconix
DM
Z
10
DS(on)
thJA
thJA
t
t
1
2
(t)
is specified
= 62.5 °C/W
www.vishay.com
10 µs
100 µs
1 ms
10 ms
100 ms, DC
100
1
5

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