SI4532ADY-T1-E3 Vishay, SI4532ADY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4532ADY-T1-E3
• Description: MOSFET Power 30V 4.9/3.9A 2W
• Manufacturer: Vishay

Specifications of SI4532ADY-T1-E3

• Transistor Polarity: N and P-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.053 Ohm @ 10 V @ N Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.9 A @ N Channel or 3.9 A @ P Channel
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Continuous Drain Current Id: 4.9A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 53mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71133
S09-0393-Rev. C, 09-Mar-09
0.15
0.12
0.09
0.06
0.03
0.00
10
20
16
12
8
4
0
8
6
4
2
0
0.0
0
0
V
I
D
DS
0.5
= 4.9 A
V
On-Resistance vs. Drain Current
= 10 V
GS
4
V
1.0
DS
= 4.5 V
2
Output Characteristics
Q
- Drain-to-Source Voltage (V)
g
I
- Total Gate Charge (nC)
D
V
1.5
- Drain Current (A)
Gate Charge
GS
8
= 10 V thru 5 V
2.0
4
12
2.5
V
3.0
GS
6
3 V
16
4 V
= 10 V
3.5
4.0
20
8
600
500
400
300
200
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
20
16
12
8
4
0
0
- 50
0
0
On-Resistance vs. Junction Temperature
C
V
I
D
rss
- 25
GS
= 4.9 A
= 10 V
1
6
V
V
GS
Transfer Characteristics
DS
0
T
C
J
- Gate-to-Source Voltage (V)
oss
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
T
25 °C
25
Capacitance
C
12
2
= 125 °C
C
50
iss
Vishay Siliconix
Si4532ADY
18
3
75
- 55 °C
100
www.vishay.com
24
4
125
150
30
5
3