SI4532ADY-T1-E3 Vishay, SI4532ADY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4532ADY-T1-E3
• Description: MOSFET Power 30V 4.9/3.9A 2W
• Manufacturer: Vishay

Specifications of SI4532ADY-T1-E3

• Transistor Polarity: N and P-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.053 Ohm @ 10 V @ N Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.9 A @ N Channel or 3.9 A @ P Channel
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Continuous Drain Current Id: 4.9A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 53mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Si4532ADY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
0.4
0.2
0.0
20
10
1
0.01
- 50
0.1
0
2
1
10
-4
Source-Drain Diode Forward Voltage
- 25
0.05
0.02
Duty Cycle = 0.5
0.1
0.2
0.2
V
0
SD
T
0.4
Single Pulse
Threshold Voltage
J
- Source-to-Drain Voltage (V)
T
= 150 °C
J
25
- Temperature (°C)
10
0.6
-3
50
I
D
0.8
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 µA
75
T
J
= 25 °C
1.0
100
10
-2
1.2
125
150
1.4
Square Wave Pulse Duration (s)
10
-1
0.15
0.12
0.09
0.06
0.03
0.00
30
24
18
12
1
6
0
10
0
-3
On-Resistance vs. Gate-to-Source Voltage
10
-2
2
V
GS
10
Single Pulse Power
- Gate-to-Source Voltage (V)
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
-1
JM
4
- T
Time (s)
t
A
1
S09-0393-Rev. C, 09-Mar-09
= P
t
1
2
Document Number: 71133
DM
Z
I
6
D
thJA
thJA
100
t
t
= 4.9 A
1
2
(t)
10
= 90 °C/W
8
100
600
600
10