SI4532ADY-T1-E3 Vishay, SI4532ADY-T1-E3 Datasheet - Page 6

• Manufacturer Part Number: SI4532ADY-T1-E3
• Description: MOSFET Power 30V 4.9/3.9A 2W
• Manufacturer: Vishay

Specifications of SI4532ADY-T1-E3

• Transistor Polarity: N and P-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.053 Ohm @ 10 V @ N Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.9 A @ N Channel or 3.9 A @ P Channel
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Continuous Drain Current Id: 4.9A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 53mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Si4532ADY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
6
- 0.2
- 0.4
0.8
0.6
0.4
0.2
0.0
10
30
10
8
6
4
2
0
1
- 50
0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
- 25
= 3.9 A
= 10 V
0.3
2
V
SD
0
Q
g
Threshold Voltage
- Source-to-Drain Voltage (V)
T
- Total Gate Charge (nC)
J
Gate Charge
25
- Temperature (°C)
0.6
4
T
J
= 150 °C
50
I
D
0.9
= 250 µA
6
75
T
J
= 25 °C
100
1.2
8
125
150
1.5
10
0.40
0.32
0.24
0.16
0.08
0.00
1.8
1.6
1.4
1.2
1.0
0.8
0.6
30
24
18
12
6
0
10
- 50
0
-2
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
V
I
D
- 25
GS
= 3.9 A
= 10 V
2
V
10
T
0
GS
J
-1
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
25
4
Time (s)
S09-0393-Rev. C, 09-Mar-09
50
I
D
1
Document Number: 71133
= 3.9 A
6
75
100
10
8
125
150
100
10