IRF9540SPBF Vishay, IRF9540SPBF Datasheet - Page 4

• Manufacturer Part Number: IRF9540SPBF
• Description: MOSFET Power P-Chan 100V 19 Amp
• Manufacturer: Vishay

Specifications of IRF9540SPBF

• Transistor Polarity: P-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.2 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 19 A
• Power Dissipation: 150000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-263AB
• Continuous Drain Current Id: -19A
• Drain Source Voltage Vds: -100V
• On Resistance Rds(on): 200mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

IRF9540S, SiHF9540S
Vishay Siliconix
www.vishay.com
4
91079_05
91079_06
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
3000
2500
2000
1500
1000
500
20
16
12
0
8
4
0
10
0
0
I
D
= - 19 A
- V
10
DS ,
Q
G
Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
V
20
DS
= - 20 V
V
C
C
C
GS
iss
rss
oss
V
30
= 0 V, f = 1 MHz
= C
= C
DS
= C
10
= - 50 V
gs
gd
ds
1
+ C
+ C
40
V
DS
gd
gd
For test circuit
see figure 13
, C
= - 80 V
C
C
C
ds
iss
oss
rss
50
Shorted
60
91079_07
91079_08
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
10
0.1
10
0
2
1
3
5
2
5
2
5
2
5
2
1
Fig. 8 - Maximum Safe Operating Area
0.0
0.1
2
- V
- V
5
1.0
SD
DS
Operation in this area limited
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
1
175
2
°
T
T
Single Pulse
2.0
C
C
J
by R
= 175 °C
= 25 °C
5
10
DS(on)
S10-1728-Rev. B, 02-Aug-10
2
3.0
25
Document Number: 91079
°
C
5
10
100
1
10
4.0
2
V
ms
ms
2
GS
µs
= 0 V
5
5.0
10
3