IRF9540SPBF Vishay, IRF9540SPBF Datasheet - Page 5

• Manufacturer Part Number: IRF9540SPBF
• Description: MOSFET Power P-Chan 100V 19 Amp
• Manufacturer: Vishay

Specifications of IRF9540SPBF

• Transistor Polarity: P-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.2 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 19 A
• Power Dissipation: 150000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-263AB
• Continuous Drain Current Id: -19A
• Drain Source Voltage Vds: -100V
• On Resistance Rds(on): 200mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document Number: 91079
S10-1728-Rev. B, 02-Aug-10
91079_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
20
16
12
8
4
0
91079_11
25
10
0.1
10
-2
50
1
10
T
-5
C
D = 0.5
0.05
0.02
0.01
0.2
0.1
, Case Temperature (°C)
75
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
10
-4
125
Single Pulse
(Thermal Response)
150
10
175
t
-3
1
, Rectangular Pulse Duration (s)
10
-2
10 %
90 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
0.1
GS
DS
R
- 10 V
IRF9540S, SiHF9540S
g
t
V
d(on)
DS
Notes:
1. Duty Factor, D = t
2. Peak T
t
p
t
r
I
AS
1
D.U.T.
j
= P
P
0.01 Ω
L
DM
DM
Vishay Siliconix
x Z
t
t
d(off)
1
1
thJC
/t
+
-
2
V
t
+ T
2
DD
t
f
C
10
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